AM1432NE Todos los transistores

 

AM1432NE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM1432NE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.56 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 4 nC
   trⓘ - Tiempo de subida: 10 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm
   Paquete / Cubierta: SC-70

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AM1432NE Datasheet (PDF)

 ..1. Size:100K  analog power
am1432ne.pdf

AM1432NE
AM1432NE

Analog Power AM1432NEN-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) () ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.033 @ VGS = 10 V 5.7battery-powered products su

 9.1. Size:64K  analog power
am1433pe.pdf

AM1432NE
AM1432NE

Analog Power AM1433PEP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC 0.064 @ VGS = -10V -4.1converters and power management in portable and -30battery-powered produc

 9.2. Size:143K  analog power
am1430n.pdf

AM1432NE
AM1432NE

Analog Power AM1430NN-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 10 V 4.3battery-powered products such

 9.3. Size:53K  analog power
am1434n.pdf

AM1432NE
AM1432NE

Analog Power AM1434NN-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) () ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.035 @ VGS = 4.5 V 5.5battery-powered products su

 9.4. Size:135K  analog power
am1431p.pdf

AM1432NE
AM1432NE

Analog Power AM1431PP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC 0.112 @ VGS = -10V -3.1converters and power management in portable and -30battery-powered product

Otros transistores... AM1340N , AM1360NE , AM1370N , AM1400NE , AM1420N , AM1421P , AM1430N , AM1431P , IRF630 , AM1433PE , AM1434N , AM1440N , AM1523CE , AM1535CE , AM1537CE , AM1541CE , AM1561CE .

 

 
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