AM1432NE Specs and Replacement

Type Designator: AM1432NE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm

Package: SC-70

AM1432NE substitution

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AM1432NE datasheet

 ..1. Size:100K  analog power
 am1432ne.pdf pdf_icon

AM1432NE

Analog Power AM1432NE N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( ) ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.033 @ VGS = 10 V 5.7 battery-powered products su... See More ⇒

 9.1. Size:64K  analog power
 am1433pe.pdf pdf_icon

AM1432NE

Analog Power AM1433PE P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC 0.064 @ VGS = -10V -4.1 converters and power management in portable and -30 battery-powered produc... See More ⇒

 9.2. Size:143K  analog power
 am1430n.pdf pdf_icon

AM1432NE

Analog Power AM1430N N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 10 V 4.3 battery-powered products such... See More ⇒

 9.3. Size:53K  analog power
 am1434n.pdf pdf_icon

AM1432NE

Analog Power AM1434N N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( ) ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.035 @ VGS = 4.5 V 5.5 battery-powered products su... See More ⇒

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Detailed specifications: AM1340N, AM1360NE, AM1370N, AM1400NE, AM1420N, AM1421P, AM1430N, AM1431P, IRFB4115, AM1433PE, AM1434N, AM1440N, AM1523CE, AM1535CE, AM1537CE, AM1541CE, AM1561CE

Keywords - AM1432NE MOSFET specs

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