AM20P03-60I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM20P03-60I
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 24 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.8 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.059 Ohm
Encapsulados: TO-251
Búsqueda de reemplazo de AM20P03-60I MOSFET
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AM20P03-60I datasheet
am20p03-60i.pdf
Analog Power AM20P03-60I P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARY minimal power loss and conserves energy, making VDS (V) rDS(on) m( )ID (A) this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 59 @ VGS = -10V 24 -30 converters, power management in
am20p03-60d.pdf
Analog Power AM20P03-60D P-Channel 32-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 59 @ VGS = -10V 24 -32 battery-powered products s
am20p06-135d.pdf
Analog Power AM20P06-135D P-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC 135 @ VGS = -10V 16 converters and power management in portable and -60 battery-powered produc
am20p02-60d.pdf
Analog Power AM20P02-60D P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARY minimal power loss and conserves energy, making VDS (V) rDS(on) m( )ID (A) this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 59 @ VGS = -4.5V 24 -20 converters, power management in
Otros transistores... AM20N10-250DE, AM20N10-350D, AM20N15-250B, AM20N15-250D, AM20N20-125D, AM20P02-60D, AM20P02-99D, AM20P03-60D, CS150N03A8, AM20P04-60D, AM20P06-135D, AM20P06-175I, AM20P10-250D, AM20P15-160D, AM20P15-295D, AM2300, AM2300N
History: AM20P06-135D
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