Справочник MOSFET. AM20P03-60I

 

AM20P03-60I MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AM20P03-60I
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 24 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 15 nC
   trⓘ - Время нарастания: 2.8 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.059 Ohm
   Тип корпуса: TO-251

 Аналог (замена) для AM20P03-60I

 

 

AM20P03-60I Datasheet (PDF)

 ..1. Size:141K  analog power
am20p03-60i.pdf

AM20P03-60I
AM20P03-60I

Analog Power AM20P03-60IP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) m()ID (A)this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 59 @ VGS = -10V 24-30converters, power management in

 4.1. Size:140K  analog power
am20p03-60d.pdf

AM20P03-60I
AM20P03-60I

Analog Power AM20P03-60DP-Channel 32-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 59 @ VGS = -10V 24-32battery-powered products s

 8.1. Size:153K  analog power
am20p06-135d.pdf

AM20P03-60I
AM20P03-60I

Analog Power AM20P06-135DP-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 135 @ VGS = -10V 16converters and power management in portable and -60battery-powered produc

 8.2. Size:139K  analog power
am20p02-60d.pdf

AM20P03-60I
AM20P03-60I

Analog Power AM20P02-60DP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) m()ID (A)this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 59 @ VGS = -4.5V 24-20converters, power management in

 8.3. Size:293K  analog power
am20p06-175i.pdf

AM20P03-60I
AM20P03-60I

Analog Power AM20P06-175IP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)175 @ VGS = -10V -14 Low thermal impedance -60200 @ VGS = -4.5V -13 Fast switching speed Typical Applications: TO-251 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits

 8.4. Size:139K  analog power
am20p02-99d.pdf

AM20P03-60I
AM20P03-60I

Analog Power AM20P02-99DP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) (m)ID (A)this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 118 @ VGS = -4.5V 17-20converters, power management i

 8.5. Size:207K  analog power
am20p04-60d.pdf

AM20P03-60I
AM20P03-60I

Analog Power AM20P04-60DP-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 69 @ VGS = -10V 22converters and power management in portable and -40battery-powered products

 8.6. Size:1426K  cn vbsemi
am20p06-135.pdf

AM20P03-60I
AM20P03-60I

AM20P06-135www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter S

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