IRLZ14A Todos los transistores

 ..1. Size:209K  samsung
 irlz14a.pdf

IRLZ14A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS(on) = 0.155 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 10 A Lower Input Capacitance Improved Gate Charge TO-220 Extended Safe Operating Area A (Max.) @ VDS = 60V Lower Leakage Current 10 Lower RDS(ON) 0.122 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute

 8.1. Size:253K  international rectifier
 irlz14pbf.pdf

PD - 95457 IRLZ14PbF Lead-Free 6/23/04 Document Number 91325 www.vishay.com 1 IRLZ14PbF Document Number 91325 www.vishay.com 2 IRLZ14PbF Document Number 91325 www.vishay.com 3 IRLZ14PbF Document Number 91325 www.vishay.com 4 IRLZ14PbF Document Number 91325 www.vishay.com 5 IRLZ14PbF Document Number 91325 www.vishay.com 6 IRLZ14PbF + Circuit Layout Consider

 8.2. Size:291K  international rectifier
 irlz14s irlz14l.pdf

PD - 9.903A IRLZ14S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRLZ14S) Low-profile through-hole (IRLZ14L) 175 C Operating Temperature RDS(on) = 0.20 G Fast Switching ID = 10A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a

 8.3. Size:170K  international rectifier
 irlz14.pdf

 8.4. Size:310K  vishay
 irlz14l irlz14s.pdf

IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S) Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) Qgs (nC) 3.5 175 C Operating Temperature Fast Sw

 8.5. Size:337K  vishay
 irlz14spbf sihlz14l sihlz14s.pdf

IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S) Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) Qgs (nC) 3.5 175 C Operating Temperature Fast Sw

 8.6. Size:312K  vishay
 irlz14s irlz14l sihlz14s sihlz14l.pdf

IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S) Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) Qgs (nC) 3.5 175 C Operating Temperature Fast Sw

 8.7. Size:1084K  vishay
 irlz14 sihlz14.pdf

IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.20 RoHS* Qg (Max.) (nC) 8.4 RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qgs (nC) 3.5 175 C Operating Temperature Qgd (nC) 6.0 Fast Switching Configuration Single Ease of Paralleling D

 8.8. Size:1086K  vishay
 irlz14pbf sihlz14.pdf

IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.20 RoHS* Qg (Max.) (nC) 8.4 RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qgs (nC) 3.5 175 C Operating Temperature Qgd (nC) 6.0 Fast Switching Configuration Single Ease of Paralleling D