All MOSFET. IRLZ14A Datasheet

 

IRLZ14A Datasheet and Replacement


   Type Designator: IRLZ14A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 7.2 nC
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm
   Package: TO220
 

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IRLZ14A Datasheet (PDF)

 ..1. Size:209K  samsung
 irlz14a.pdf pdf_icon

IRLZ14A

IRLZ14AAdvanced Power MOSFETFEATURESBVDSS = 60 V Logic-Level Gate DriveRDS(on) = 0.155 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 10 A Lower Input Capacitance Improved Gate ChargeTO-220 Extended Safe Operating AreaA (Max.) @ VDS = 60V Lower Leakage Current : 10 Lower RDS(ON) : 0.122 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute

 8.1. Size:253K  international rectifier
 irlz14pbf.pdf pdf_icon

IRLZ14A

PD - 95457IRLZ14PbF Lead-Free6/23/04Document Number: 91325 www.vishay.com1IRLZ14PbFDocument Number: 91325 www.vishay.com2IRLZ14PbFDocument Number: 91325 www.vishay.com3IRLZ14PbFDocument Number: 91325 www.vishay.com4IRLZ14PbFDocument Number: 91325 www.vishay.com5IRLZ14PbFDocument Number: 91325 www.vishay.com6IRLZ14PbF+Circuit Layout Consider

 8.2. Size:291K  international rectifier
 irlz14s irlz14l.pdf pdf_icon

IRLZ14A

PD - 9.903AIRLZ14S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRLZ14S) Low-profile through-hole (IRLZ14L) 175C Operating Temperature RDS(on) = 0.20G Fast SwitchingID = 10ASDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a

 8.3. Size:170K  international rectifier
 irlz14.pdf pdf_icon

IRLZ14A

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Keywords - IRLZ14A MOSFET datasheet

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