All MOSFET. IRLZ14A Datasheet

 

IRLZ14A MOSFET. Datasheet pdf. Equivalent

Type Designator: IRLZ14A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 31 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 265 pF

Maximum Drain-Source On-State Resistance (Rds): 0.155 Ohm

Package: TO220

IRLZ14A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLZ14A Datasheet (PDF)

1.1. irlz14a.pdf Size:209K _samsung

IRLZ14A
IRLZ14A

IRLZ14A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive ? RDS(on) = 0.155 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 10 A Lower Input Capacitance Improved Gate Charge TO-220 Extended Safe Operating Area µA (Max.) @ VDS = 60V Lower Leakage Current : 10 Lower RDS(ON) : 0.122 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum

4.1. irlz14.pdf Size:170K _international_rectifier

IRLZ14A
IRLZ14A

4.2. irlz14pbf.pdf Size:253K _international_rectifier

IRLZ14A
IRLZ14A

PD - 95457 IRLZ14PbF • Lead-Free 6/23/04 Document Number: 91325 www.vishay.com 1 IRLZ14PbF Document Number: 91325 www.vishay.com 2 IRLZ14PbF Document Number: 91325 www.vishay.com 3 IRLZ14PbF Document Number: 91325 www.vishay.com 4 IRLZ14PbF Document Number: 91325 www.vishay.com 5 IRLZ14PbF Document Number: 91325 www.vishay.com 6 IRLZ14PbF + Circuit Layout Consideration

4.3. irlz14s.pdf Size:291K _international_rectifier

IRLZ14A
IRLZ14A

PD - 9.903A IRLZ14S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRLZ14S) Low-profile through-hole (IRLZ14L) 175°C Operating Temperature RDS(on) = 0.20? G Fast Switching ID = 10A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Th

4.4. irlz14s-l.pdf Size:199K _international_rectifier

IRLZ14A
IRLZ14A

PD - 9.903A IRLZ14S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRLZ14S) Low-profile through-hole (IRLZ14L) 175°C Operating Temperature RDS(on) = 0.20? G Fast Switching ID = 10A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Th

4.5. irlz14s irlz14l sihlz14s sihlz14l.pdf Size:312K _vishay

IRLZ14A
IRLZ14A

IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition • Advanced Process Technology RDS(on) (?)VGS = 5 V 0.20 • Surface Mount (IRLZ14S, SiHLZ14S) Qg (Max.) (nC) 8.4 • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) Qgs (nC) 3.5 • 175 °C Operating Temperature • Fast Switching Qgd (nC)

4.6. irlz14 sihlz14.pdf Size:1084K _vishay

IRLZ14A
IRLZ14A

IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • Logic-Level Gate Drive RDS(on) (?)VGS = 5.0 V 0.20 RoHS* Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qgs (nC) 3.5 • 175 °C Operating Temperature Qgd (nC) 6.0 • Fast Switching Configuration Single • Ease of Paralleling D • Simple Drive Re

Datasheet: IRLW630A , IRLW640A , IRLWZ14A , IRLWZ24A , IRLWZ34A , IRLWZ44A , IRLZ10 , IRLZ14 , BUZ11 , IRLZ20 , IRLZ24 , IRLZ24A , IRLZ24N , IRLZ24NL , IRLZ24NS , IRLZ30 , IRLZ34 .

 


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