2SJ449 Todos los transistores

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ449 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ449 is P-Channel MOS Field Effect Transistor de- PACKAGE DIMENSIONS signed for high voltage switching applications. (in millimeters) 10.0 0.3 4.5 0.2 FEATURES 3.2 0.2 2.7 0.2 Low On-Resistance RDS(on) = 0.8 MAX. (@ VGS = 10 V, ID = 3.0 A) L

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ449 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ449 is P-Channel MOS Field Effect Transistor de- PACKAGE DIMENSIONS signed for high voltage switching applications. (in millimeters) 10.0 0.3 4.5 0.2 FEATURES 3.2 0.2 2.7 0.2 Low On-Resistance RDS(on) = 0.8 MAX. (@ VGS = 10 V, ID = 3.0 A) L

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 2sj448.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ448 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ448 is P-Channel MOS Field Effect Transistor de- (in millimeters) signed for high voltage switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 FEATURES 2.7 0.2 Low On-Resistance RDS(on) = 2.0 MAX. (@ VGS = 10 V, ID = 2.0 A) L

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 2sk113 2sk152 2sk363 2sj44 ifn113 ifn152 ifn363 ifp44.pdf

Databook.fxp 1/13/99 2 09 PM Page D-3 01/99 D-3 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 Process N N N P Unit Channel Channel Channel Channel Limit Parameters V 50 20 40 25 BVGSS Min 1.0 0.1 1.0 1.0 nA IGSS ( 20 V) ( 10 V) ( 30 V) (