2SJ449 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ449
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 35 W
Tensión drenaje-fuente (Vds): 250 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Carga de compuerta (Qg): 23.1 nC
Tiempo de elevación (tr): 16 nS
Conductancia de drenaje-sustrato (Cd): 360 pF
Resistencia drenaje-fuente RDS(on): 0.55 Ohm
Empaquetado / Estuche: MP45F
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2SJ449 Datasheet (PDF)
1.1. 2sj449.pdf 
Size:120K _nec
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ449 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ449 is P-Channel MOS Field Effect Transistor de- PACKAGE DIMENSIONS signed for high voltage switching applications. (in millimeters) 10.0 0.3 4.5 0.2 FEATURES 3.2 0.2 2.7 0.2 Low On-Resistance RDS(on) = 0.8 ? MAX. (@ VGS = 10 V, ID = 3.0 A) Low Ciss Ciss = 10
1.2. 2sj449-1.pdf Size:116K _nec
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ449 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ449 is P-Channel MOS Field Effect Transistor de- PACKAGE DIMENSIONS signed for high voltage switching applications. (in millimeters) 10.0 0.3 4.5 0.2 FEATURES 3.2 0.2 2.7 0.2 Low On-Resistance RDS(on) = 0.8 ? MAX. (@ VGS = 10 V, ID = 3.0 A) Low Ciss Ciss = 10
5.1. 2sj440.pdf Size:110K _toshiba
5.2. 2sj448.pdf Size:120K _nec
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ448 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ448 is P-Channel MOS Field Effect Transistor de- (in millimeters) signed for high voltage switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 FEATURES 2.7 0.2 Low On-Resistance RDS(on) = 2.0 ? MAX. (@ VGS = 10 V, ID = 2.0 A) Low Ciss Ciss = 47
5.3. 2sk113 2sk152 2sk363 2sj44 ifn113 ifn152 ifn363 ifp44.pdf Size:88K _interfet
Databook.fxp 1/13/99 2:09 PM Page D-3 01/99 D-3 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 Process N N N P Unit Channel Channel Channel Channel Limit Parameters V – 50 – 20 – 40 25 BVGSS Min 1.0 0.1 1.0 1.0 nA IGSS (– 20 V) (–10 V) (– 30 V) (
Otros transistores... 2SJ330 , 2SJ331 , 2SJ353 , 2SJ411 , 2SJ424 , 2SJ425 , 2SJ44 , 2SJ448 , IRF9530 , 2SJ45 , 2SJ460 , 2SJ461 , 2SJ462 , 2SJ463 , 2SJ471 , 2SJ479 , 2SJ483 .
