2SJ449 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ449
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 360 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET 2SJ449
2SJ449 Datasheet (PDF)
2sj449.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ449SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONThe 2SJ449 is P-Channel MOS Field Effect Transistor de-PACKAGE DIMENSIONSsigned for high voltage switching applications.(in millimeters)10.0 0.3 4.5 0.2FEATURES3.2 0.22.7 0.2 Low On-ResistanceRDS(on) = 0.8 MAX. (@ VGS = 10 V, ID = 3.0 A) L
2sj449-1.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ449SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONThe 2SJ449 is P-Channel MOS Field Effect Transistor de-PACKAGE DIMENSIONSsigned for high voltage switching applications.(in millimeters)10.0 0.3 4.5 0.2FEATURES3.2 0.22.7 0.2 Low On-ResistanceRDS(on) = 0.8 MAX. (@ VGS = 10 V, ID = 3.0 A) L
2sj448.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ448SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SJ448 is P-Channel MOS Field Effect Transistor de-(in millimeters)signed for high voltage switching applications.10.0 0.3 4.5 0.23.2 0.2FEATURES2.7 0.2 Low On-ResistanceRDS(on) = 2.0 MAX. (@ VGS = 10 V, ID = 2.0 A) L
2sk113 2sk152 2sk363 2sj44 ifn113 ifn152 ifn363 ifp44.pdf
Databook.fxp 1/13/99 2:09 PM Page D-301/99 D-3Japanese Equivalent JFET TypesSilicon Junction Field-Effect Transistors2SK113 2SK152 2SK363 2SJ44JapaneseIFN113 IFN152 IFN363 IFP44InterFETNJ132 NJ132L NJ450 PJ99ProcessN N N P UnitChannel Channel Channel Channel Limit ParametersV 50 20 40 25 BVGSSMin1.0 0.1 1.0 1.0 nAIGSS( 20 V) (10 V) ( 30 V) (
Otros transistores... 2SJ330 , 2SJ331 , 2SJ353 , 2SJ411 , 2SJ424 , 2SJ425 , 2SJ44 , 2SJ448 , STF13NM60N , 2SJ45 , 2SJ460 , 2SJ461 , 2SJ462 , 2SJ463 , 2SJ471 , 2SJ479 , 2SJ483 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918