2SJ449 Datasheet and Replacement

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ449SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONThe 2SJ449 is P-Channel MOS Field Effect Transistor de-PACKAGE DIMENSIONSsigned for high voltage switching applications.(in millimeters)10.0 0.3 4.5 0.2FEATURES3.2 0.22.7 0.2 Low On-ResistanceRDS(on) = 0.8 MAX. (@ VGS = 10 V, ID = 3.0 A) L

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ449SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONThe 2SJ449 is P-Channel MOS Field Effect Transistor de-PACKAGE DIMENSIONSsigned for high voltage switching applications.(in millimeters)10.0 0.3 4.5 0.2FEATURES3.2 0.22.7 0.2 Low On-ResistanceRDS(on) = 0.8 MAX. (@ VGS = 10 V, ID = 3.0 A) L

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ448SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SJ448 is P-Channel MOS Field Effect Transistor de-(in millimeters)signed for high voltage switching applications.10.0 0.3 4.5 0.23.2 0.2FEATURES2.7 0.2 Low On-ResistanceRDS(on) = 2.0 MAX. (@ VGS = 10 V, ID = 2.0 A) L

Databook.fxp 1/13/99 2:09 PM Page D-301/99 D-3Japanese Equivalent JFET TypesSilicon Junction Field-Effect Transistors2SK113 2SK152 2SK363 2SJ44JapaneseIFN113 IFN152 IFN363 IFP44InterFETNJ132 NJ132L NJ450 PJ99ProcessN N N P UnitChannel Channel Channel Channel Limit ParametersV 50 20 40 25 BVGSSMin1.0 0.1 1.0 1.0 nAIGSS( 20 V) (10 V) ( 30 V) (