AM2339P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM2339P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 3.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 75 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.057 Ohm

Encapsulados: SOT-23

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AM2339P datasheet

 ..1. Size:294K  analog power
am2339p.pdf pdf_icon

AM2339P

Analog Power AM2339P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 57 @ VGS = -4.5V -3.9 Low thermal impedance -30 89 @ VGS = -2.5V -3.2 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

 0.1. Size:1480K  cn vbsemi
am2339p-t1.pdf pdf_icon

AM2339P

AM2339P-T1 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS

 9.1. Size:295K  analog power
am2334ne.pdf pdf_icon

AM2339P

Analog Power AM2334NE N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 60 @ VGS = 4.5V 3.5 Low thermal impedance 30 82 @ VGS = 2.5V 3.0 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.2. Size:168K  analog power
am2334n.pdf pdf_icon

AM2339P

Analog Power AM2334N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 60 @ VGS = 4.5V 3.5 converters and power management in portable and 30 battery-powered products s

Otros transistores... AM2329P, AM2330N, AM2330NE, AM2332N, AM2334N, AM2334NE, AM2336N, AM2337P, IRFP460, AM2340N, AM2340NE, AM2341P, AM2342, AM2342N, AM2342NE, AM2343P, AM2343PE