IRLZ24N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLZ24N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 15(max) nC
   trⓘ - Tiempo de subida: 74 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET IRLZ24N

IRLZ24N Datasheet (PDF)

..1. Size:109K international rectifier
irlz24n.pdf

PD - 9.1357AIRLZ24NPRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG Fully Avalanche RatedID = 18ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible

..2. Size:765K international rectifier
irlz24npbf.pdf

PD - 94998IRLZ24NPbF Lead-Freewww.irf.com 12/11/04IRLZ24NPbF2 www.irf.comIRLZ24NPbFwww.irf.com 3IRLZ24NPbF4 www.irf.comIRLZ24NPbFwww.irf.com 5IRLZ24NPbF6 www.irf.comIRLZ24NPbFwww.irf.com 7IRLZ24NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13

..3. Size:2577K infineon
irlz24npbf.pdf

..4. Size:1130K cn vbsemi
irlz24npbf.pdf

IRLZ24NPBFwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Di

..5. Size:246K inchange semiconductor
irlz24n.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLZ24N IIRLZ24NFEATURESStatic drain-source on-resistance:RDS(on) 0.06Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

0.1. Size:191K international rectifier
irlz24ns irlz24nl.pdf

PD - 91358EIRLZ24NS/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRLZ24NS) Low-profile through-hole (IRLZ24NL) 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG Fully Avalanche RatedID = 18ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques

0.2. Size:301K international rectifier
irlz24nlpbf irlz24nspbf.pdf

PD - 95584IRLZ24NSPbFIRLZ24NLPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRLZ24NS) DVDSS = 55Vl Low-profile through-hole (IRLZ24NL)l 175C Operating TemperatureRDS(on) = 0.06l Fast SwitchingGl Fully Avalanche RatedID = 18Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize

0.3. Size:271K international rectifier
auirlz24nl auirlz24ns.pdf

AUIRLZ24NSAUTOMOTIVE GRADEAUIRLZ24NLFeatures HEXFET Power MOSFETDl Advanced Process TechnologyVDSS 55Vl Logic Level Gate Drivel 175C Operating TemperatureRDS(on) max. 0.06l Fast SwitchingGl Repetitive Avalanche Allowed up to TjmaxID 18A l Lead-Free, RoHS Compliant Sl Automotive Qualified *DDDescriptionSpecifically designed for Automotive application

0.4. Size:197K infineon
irlz24ns irlz24nl.pdf

Otros transistores... IRLWZ34A , IRLWZ44A , IRLZ10 , IRLZ14 , IRLZ14A , IRLZ20 , IRLZ24 , IRLZ24A , 7N65 , IRLZ24NL , IRLZ24NS , IRLZ30 , IRLZ34 , IRLZ34A , IRLZ34N , IRLZ34NL , IRLZ34NS .

Liste

Recientemente añadidas las descripciónes de los transistores: