Справочник MOSFET. IRLZ24N

 

IRLZ24N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRLZ24N
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 45 W
   Предельно допустимое напряжение сток-исток |Uds|: 55 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 16 V
   Пороговое напряжение включения |Ugs(th)|: 2 V
   Максимально допустимый постоянный ток стока |Id|: 18 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 15(max) nC
   Время нарастания (tr): 74 ns
   Выходная емкость (Cd): 130 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.06 Ohm
   Тип корпуса: TO220

 Аналог (замена) для IRLZ24N

 

 

IRLZ24N Datasheet (PDF)

 ..1. Size:109K  international rectifier
irlz24n.pdf

IRLZ24N IRLZ24N

PD - 9.1357AIRLZ24NPRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG Fully Avalanche RatedID = 18ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible

 ..2. Size:765K  international rectifier
irlz24npbf.pdf

IRLZ24N IRLZ24N

PD - 94998IRLZ24NPbF Lead-Freewww.irf.com 12/11/04IRLZ24NPbF2 www.irf.comIRLZ24NPbFwww.irf.com 3IRLZ24NPbF4 www.irf.comIRLZ24NPbFwww.irf.com 5IRLZ24NPbF6 www.irf.comIRLZ24NPbFwww.irf.com 7IRLZ24NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13

 ..3. Size:2577K  infineon
irlz24npbf.pdf

IRLZ24N IRLZ24N

PD - 94998IRLZ24NPbF Lead-Freewww.irf.com 12/11/04IRLZ24NPbF2 www.irf.comIRLZ24NPbFwww.irf.com 3IRLZ24NPbF4 www.irf.comIRLZ24NPbFwww.irf.com 5IRLZ24NPbF6 www.irf.comIRLZ24NPbFwww.irf.com 7IRLZ24NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13

 ..4. Size:1130K  cn vbsemi
irlz24npbf.pdf

IRLZ24N IRLZ24N

IRLZ24NPBFwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Di

 ..5. Size:246K  inchange semiconductor
irlz24n.pdf

IRLZ24N IRLZ24N

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLZ24N IIRLZ24NFEATURESStatic drain-source on-resistance:RDS(on) 0.06Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 0.1. Size:191K  international rectifier
irlz24ns irlz24nl.pdf

IRLZ24N IRLZ24N

PD - 91358EIRLZ24NS/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRLZ24NS) Low-profile through-hole (IRLZ24NL) 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG Fully Avalanche RatedID = 18ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques

 0.2. Size:301K  international rectifier
irlz24nlpbf irlz24nspbf.pdf

IRLZ24N IRLZ24N

PD - 95584IRLZ24NSPbFIRLZ24NLPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRLZ24NS) DVDSS = 55Vl Low-profile through-hole (IRLZ24NL)l 175C Operating TemperatureRDS(on) = 0.06l Fast SwitchingGl Fully Avalanche RatedID = 18Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize

 0.3. Size:271K  international rectifier
auirlz24nl auirlz24ns.pdf

IRLZ24N IRLZ24N

AUIRLZ24NSAUTOMOTIVE GRADEAUIRLZ24NLFeatures HEXFET Power MOSFETDl Advanced Process TechnologyVDSS 55Vl Logic Level Gate Drivel 175C Operating TemperatureRDS(on) max. 0.06l Fast SwitchingGl Repetitive Avalanche Allowed up to TjmaxID 18A l Lead-Free, RoHS Compliant Sl Automotive Qualified *DDDescriptionSpecifically designed for Automotive application

 0.4. Size:197K  infineon
irlz24ns irlz24nl.pdf

IRLZ24N IRLZ24N

PD - 91358EIRLZ24NS/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRLZ24NS) Low-profile through-hole (IRLZ24NL) 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG Fully Avalanche RatedID = 18ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques

Другие MOSFET... IRLWZ34A , IRLWZ44A , IRLZ10 , IRLZ14 , IRLZ14A , IRLZ20 , IRLZ24 , IRLZ24A , IRLB4132 , IRLZ24NL , IRLZ24NS , IRLZ30 , IRLZ34 , IRLZ34A , IRLZ34N , IRLZ34NL , IRLZ34NS .

 

 
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