AM2359PE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM2359PE

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 11 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.7 Ohm

Encapsulados: SOT-23

 Búsqueda de reemplazo de AM2359PE MOSFET

- Selecciónⓘ de transistores por parámetros

 

AM2359PE datasheet

 ..1. Size:287K  analog power
 am2359pe.pdf pdf_icon

AM2359PE

Analog Power AM2359PE P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 700 @ VGS = -10V -1.2 Low thermal impedance -60 800 @ VGS = -4.5V -1.1 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MA

 7.1. Size:289K  analog power
 am2359p.pdf pdf_icon

AM2359PE

Analog Power AM2359P P-Channel -60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 381 @ VGS = -10V -1.6 Low thermal impedance -60 561 @ VGS = -4.5V -1.3 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX

 9.1. Size:288K  analog power
 am2358n.pdf pdf_icon

AM2359PE

Analog Power AM2358N N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 92 @ VGS = 10V 3.1 Low thermal impedance 60 107 @ VGS = 4.5V 2.9 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.2. Size:165K  analog power
 am2358ne.pdf pdf_icon

AM2359PE

Analog Power AM2358NE N-Channel 60V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.092 @ VGS = 10 V 3.1 battery-powered products suc

MOSTRAR MÁS

Otros transistores... AM2343PE, AM2344N, AM2345P, AM2345PE, AM2347P, AM2358N, AM2358NE, AM2359P, 8205A, AM2360N, AM2361P, AM2362N, AM2370N, AM2371P, AM2372N, AM2373P, AM2374N