AM2359PE - параметры транзистора MOSFET, его аналоги, datasheet

AM2359PE Datasheet (PDF)

..1. Size:287K analog power
am2359pe.pdf pdf_icon

Analog Power AM2359PEP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)700 @ VGS = -10V -1.2 Low thermal impedance -60800 @ VGS = -4.5V -1.1 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MA

7.1. Size:289K analog power
am2359p.pdf pdf_icon

Analog Power AM2359PP-Channel -60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)381 @ VGS = -10V -1.6 Low thermal impedance -60561 @ VGS = -4.5V -1.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX

9.1. Size:288K analog power
am2358n.pdf pdf_icon

Analog Power AM2358NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)92 @ VGS = 10V3.1 Low thermal impedance 60107 @ VGS = 4.5V2.9 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

9.2. Size:165K analog power
am2358ne.pdf pdf_icon

Analog Power AM2358NEN-Channel 60V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.092 @ VGS = 10 V 3.1battery-powered products suc