AM2370N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AM2370N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 3.9 nC
   trⓘ - Tiempo de subida: 3.9 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
   Paquete / Cubierta: SOT-23

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AM2370N Datasheet (PDF)

..1. Size:291K analog power
am2370n.pdf

Analog Power AM2370NN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)280 @ VGS = 10V1.5 Low thermal impedance 100355 @ VGS = 4.5V1.3 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost con

9.1. Size:283K analog power
am2371p.pdf

Analog Power AM2371PP-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features:rDS(on) ()VDS (V) ID(A) Low r trench technologyDS(on)1.2 @ VGS = -10V -1 Low thermal impedance-1001.3 @ VGS = -4.5V -0.9 Fast switching speedTypical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters

9.2. Size:293K analog power
am2374n.pdf

Analog Power AM2374NN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)92 @ VGS = 10V3.1 Low thermal impedance 10099 @ VGS = 4.5V3.0 Fast switching speed Typical Applications: SOT-23 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

9.3. Size:276K analog power
am2373p.pdf

Analog Power AM2373PP-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) ()VDS (V) ID (A) Low r trench technology DS(on)6 @ VGS = -10V -0.39 Low thermal impedance -1006.5 @ VGS = -4.5V -0.37 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost

9.4. Size:61K analog power
am2372n.pdf

Analog Power AM2372NN-Channel 100V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) () ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 2 @ VGS = 10 V 0.7battery-powered products such a

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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