All MOSFET. AM2370N Datasheet

 

AM2370N MOSFET. Datasheet pdf. Equivalent

Type Designator: AM2370N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.3 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 1.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 3.9 nC

Rise Time (tr): 3.9 nS

Drain-Source Capacitance (Cd): 40 pF

Maximum Drain-Source On-State Resistance (Rds): 0.28 Ohm

Package: SOT-23

AM2370N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AM2370N Datasheet (PDF)

1.1. am2370n.pdf Size:291K _upd-mosfet

AM2370N
AM2370N

Analog Power AM2370N N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID(A) • Low r trench technology DS(on) 280 @ VGS = 10V 1.5 • Low thermal impedance 100 355 @ VGS = 4.5V 1.3 • Fast switching speed Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost con

5.1. am2372n.pdf Size:61K _upd-mosfet

AM2370N
AM2370N

Analog Power AM2372N N-Channel 100V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (Ω) ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 2 @ VGS = 10 V 0.7 battery-powered products such a

5.2. am2371p.pdf Size:283K _upd-mosfet

AM2370N
AM2370N

Analog Power AM2371P P-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (Ω) VDS (V) ID(A) • Low r trench technology DS(on) 1.2 @ VGS = -10V -1 • Low thermal impedance -100 1.3 @ VGS = -4.5V -0.9 • Fast switching speed Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters

 5.3. am2374n.pdf Size:293K _upd-mosfet

AM2370N
AM2370N

Analog Power AM2374N N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID (A) • Low r trench technology DS(on) 92 @ VGS = 10V 3.1 • Low thermal impedance 100 99 @ VGS = 4.5V 3.0 • Fast switching speed Typical Applications: SOT-23 • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE

5.4. am2373p.pdf Size:276K _upd-mosfet

AM2370N
AM2370N

Analog Power AM2373P P-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (Ω) VDS (V) ID (A) • Low r trench technology DS(on) 6 @ VGS = -10V -0.39 • Low thermal impedance -100 6.5 @ VGS = -4.5V -0.37 • Fast switching speed Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost

Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .

 
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MOSFET: NVJD4152P | NVGS5120P | NVGS4141N | NVGS4111P | NVGS3443 | NVGS3441 | NVGS3136P | NVGS3130N | NVF6P02 | NVF5P03 | NVF3055L108 | NVF3055-100 | NVF2955 | NVF2201N | NVE4153N |

 

 

 
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