AM2394NE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM2394NE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 14 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm

Encapsulados: SOT-23

 Búsqueda de reemplazo de AM2394NE MOSFET

- Selecciónⓘ de transistores por parámetros

 

AM2394NE datasheet

 ..1. Size:289K  analog power
 am2394ne.pdf pdf_icon

AM2394NE

Analog Power AM2394NE N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 1200 @ VGS = 10V 0.9 Low thermal impedance 150 1300 @ VGS = 4.5V 0.8 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MA

 9.1. Size:278K  analog power
 am2392n.pdf pdf_icon

AM2394NE

Analog Power AM2392N N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) ( ) VDS (V) ID(A) Low r trench technology DS(on) 1.2 @ VGS = 10V 0.9 Low thermal impedance 150 1.4 @ VGS = 5.5V 0.8 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

 9.2. Size:287K  analog power
 am2391p.pdf pdf_icon

AM2394NE

Analog Power AM2391P P-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) ( ) VDS (V) ID(A) Low r trench technology DS(on) 1.2 @ VGS = -10V -0.9 Low thermal impedance -150 1.3 @ VGS = -4.5V -0.8 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost c

 9.3. Size:133K  analog power
 am2398n.pdf pdf_icon

AM2394NE

Analog Power AM2398N N-Channel 60V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) PRODUCT SUMMARY assures minimal power loss and conserves VDS (V) rDS(on) ( )ID (A) energy, making this device ideal for use in 0.194 @ VGS = 10 V 2.2 power management circuitry. Typical 60 applications are power switch, power 0.273 @ VGS = 4.5V 1

MOSTRAR MÁS

Otros transistores... AM2371P, AM2372N, AM2373P, AM2374N, AM2381P, AM2390N, AM2391P, AM2392N, K3569, AM2398N, AM2398NE, IRFBC40APBF, IRFBC40ASPBF, IRFBC40LC, IRFBC40LCPBF, IRFBC40LPBF, IRFBC40PBF