AM2394NE
MOSFET. Datasheet pdf. Equivalent
Type Designator: AM2394NE
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 0.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 3
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 14
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2
Ohm
Package:
SOT-23
AM2394NE
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM2394NE
Datasheet (PDF)
..1. Size:289K analog power
am2394ne.pdf
Analog Power AM2394NEN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)1200 @ VGS = 10V0.9 Low thermal impedance 1501300 @ VGS = 4.5V0.8 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MA
9.1. Size:278K analog power
am2392n.pdf
Analog Power AM2392NN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) ()VDS (V) ID(A) Low r trench technology DS(on)1.2 @ VGS = 10V0.9 Low thermal impedance 1501.4 @ VGS = 5.5V0.8 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU
9.2. Size:287K analog power
am2391p.pdf
Analog Power AM2391PP-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) ()VDS (V) ID(A) Low r trench technology DS(on)1.2 @ VGS = -10V -0.9 Low thermal impedance -1501.3 @ VGS = -4.5V -0.8 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost c
9.3. Size:133K analog power
am2398n.pdf
Analog Power AM2398NN-Channel 60V (D-S) MOSFETThese miniature surface mount MOSFETsutilize High Cell Density process. Low rDS(on)PRODUCT SUMMARYassures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.194 @ VGS = 10 V 2.2power management circuitry. Typical 60applications are power switch, power 0.273 @ VGS = 4.5V 1
9.4. Size:276K analog power
am2390n.pdf
Analog Power AM2390NN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) ()VDS (V) ID(A) Low r trench technology DS(on)0.7 @ VGS = 10V1.1 Low thermal impedance 1501.2 @ VGS = 4.5V0.8 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost conv
9.5. Size:175K analog power
am2398ne.pdf
Analog Power AM2398NEN-Channel 60V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.194 @ VGS = 10 V 2.2battery-powered products suc
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