IRFD214PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFD214PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.45 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7.6 nS

Cossⓘ - Capacitancia de salida: 42 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm

Encapsulados: DIP-4

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IRFD214PBF datasheet

 ..1. Size:1261K  vishay
irfd214pbf sihfd214.pdf pdf_icon

IRFD214PBF

IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.0 For Automatic Insertion RoHS* Qg (Max.) (nC) 8.2 COMPLIANT End Stackable Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Ease of Paralleling Configuration Single Simple Drive Requiremen

 7.1. Size:314K  international rectifier
irfd214.pdf pdf_icon

IRFD214PBF

PD -9.1271 IRFD214 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated VDSS = 250V For Automatic Insertion End Stackable RDS(on) = 2.0 Fast Switching Ease of paralleling Simple Drive Requirements ID = 0.45A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device desi

 7.2. Size:1260K  vishay
irfd214 sihfd214.pdf pdf_icon

IRFD214PBF

IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.0 For Automatic Insertion RoHS* Qg (Max.) (nC) 8.2 COMPLIANT End Stackable Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Ease of Paralleling Configuration Single Simple Drive Requiremen

 8.1. Size:173K  international rectifier
irfd210.pdf pdf_icon

IRFD214PBF

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