IRFD214PBF Datasheet and Replacement
Type Designator: IRFD214PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 0.45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 8.2 nC
tr ⓘ - Rise Time: 7.6 nS
Cossⓘ - Output Capacitance: 42 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: DIP-4
IRFD214PBF substitution
IRFD214PBF Datasheet (PDF)
irfd214pbf sihfd214.pdf

IRFD214, SiHFD214Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = 10 V 2.0 For Automatic InsertionRoHS*Qg (Max.) (nC) 8.2COMPLIANT End StackableQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Ease of ParallelingConfiguration Single Simple Drive Requiremen
irfd214.pdf

PD -9.1271IRFD214HEXFET Power MOSFETDynamic dv/dt RatingRepetitive Avalanche RatedVDSS = 250VFor Automatic InsertionEnd StackableRDS(on) = 2.0Fast SwitchingEase of parallelingSimple Drive RequirementsID = 0.45ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device desi
irfd214 sihfd214.pdf

IRFD214, SiHFD214Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = 10 V 2.0 For Automatic InsertionRoHS*Qg (Max.) (nC) 8.2COMPLIANT End StackableQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Ease of ParallelingConfiguration Single Simple Drive Requiremen
Datasheet: IRFD020 , IRFD020PBF , IRFD024PBF , IRFD110PBF , IRFD113PBF , IRFD120PBF , IRFD123PBF , IRFD210PBF , IRFB31N20D , IRFD220PBF , IRFD224PBF , IRFD310PBF , IRFD320PBF , IRFD420PBF , IRFD9010 , IRFD9012 , IRFD9010PBF .
Keywords - IRFD214PBF MOSFET datasheet
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