IRFD310PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFD310PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.9 nS
Cossⓘ - Capacitancia de salida: 34 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.6 Ohm
Paquete / Cubierta: DIP-4
Búsqueda de reemplazo de IRFD310PBF MOSFET
IRFD310PBF Datasheet (PDF)
irfd310pbf.pdf
PD- 95932IRFD310PbF Lead-Free10/28/04Document Number: 91133 www.vishay.com1IRFD310PbFDocument Number: 91133 www.vishay.com2IRFD310PbFDocument Number: 91133 www.vishay.com3IRFD310PbFDocument Number: 91133 www.vishay.com4IRFD310PbFDocument Number: 91133 www.vishay.com5IRFD310PbFDocument Number: 91133 www.vishay.com6IRFD310PbFDocument Number: 91
irfd310pbf sihfd310.pdf
IRFD310, SiHFD310Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.6RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 17 End StackableQgs (nC) 3.4 Fast SwitchingQgd (nC) 8.5 Ease of ParallelingConfiguration Single Simple Drive Requirement
irfd310.pdf
PD -9.1225IRFD310HEXFET Power MOSFETDynamic dv/dt RatingRepetitive Avalanche RatedVDSS = 400VFor Automatic InsertionEnd StackableRDS(on) = 3.6Fast SwitchingEase of parallelingSimple Drive RequirementsID = 0.35ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device desi
irfd310 sihfd310.pdf
IRFD310, SiHFD310Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.6RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 17 End StackableQgs (nC) 3.4 Fast SwitchingQgd (nC) 8.5 Ease of ParallelingConfiguration Single Simple Drive Requirement
Otros transistores... IRFD110PBF , IRFD113PBF , IRFD120PBF , IRFD123PBF , IRFD210PBF , IRFD214PBF , IRFD220PBF , IRFD224PBF , 2N60 , IRFD320PBF , IRFD420PBF , IRFD9010 , IRFD9012 , IRFD9010PBF , IRFD9014PBF , IRFD9020PBF , IRFD9024PBF .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AGM40P75D | AGM40P75A | AGM40P65E | AGM40P65AP | AGM40P55D | AGM40P55AP | AGM40P55A | AGM40P35D | AGM40P35AP | AGM40P35A-KU | AGM40P35A | AGM40P30D | AGM40P30AP | AGM40P30A | AGM60P20R | AGM60P20D
Popular searches
c711 transistor | k3599 transistor datasheet | 2sc1735 | transistor 2sc5200 | 2sb560 transistor | a1273 | c3421 transistor | c644 transistor

