IRFD310PBF Todos los transistores

 ..1. Size:980K  international rectifier
 irfd310pbf.pdf

PD- 95932 IRFD310PbF Lead-Free 10/28/04 Document Number 91133 www.vishay.com 1 IRFD310PbF Document Number 91133 www.vishay.com 2 IRFD310PbF Document Number 91133 www.vishay.com 3 IRFD310PbF Document Number 91133 www.vishay.com 4 IRFD310PbF Document Number 91133 www.vishay.com 5 IRFD310PbF Document Number 91133 www.vishay.com 6 IRFD310PbF Document Number 91

 ..2. Size:1325K  vishay
 irfd310pbf sihfd310.pdf

IRFD310, SiHFD310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.6 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 17 End Stackable Qgs (nC) 3.4 Fast Switching Qgd (nC) 8.5 Ease of Paralleling Configuration Single Simple Drive Requirement

 7.1. Size:303K  international rectifier
 irfd310.pdf

PD -9.1225 IRFD310 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated VDSS = 400V For Automatic Insertion End Stackable RDS(on) = 3.6 Fast Switching Ease of paralleling Simple Drive Requirements ID = 0.35A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device desi

 7.2. Size:1324K  vishay
 irfd310 sihfd310.pdf

IRFD310, SiHFD310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.6 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 17 End Stackable Qgs (nC) 3.4 Fast Switching Qgd (nC) 8.5 Ease of Paralleling Configuration Single Simple Drive Requirement

 9.1. Size:947K  international rectifier
 irfd320pbf.pdf

PD- 95930 IRFD320PbF Lead-Free 10/28/04 Document Number 91134 www.vishay.com 1 IRFD320PbF Document Number 91134 www.vishay.com 2 IRFD320PbF Document Number 91134 www.vishay.com 3 IRFD320PbF Document Number 91134 www.vishay.com 4 IRFD320PbF Document Number 91134 www.vishay.com 5 IRFD320PbF Document Number 91134 www.vishay.com 6 IRFD320PbF Document Number 91

 9.2. Size:320K  international rectifier
 irfd320.pdf

PD -9.1226 IRFD320 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated VDSS = 400V For Automatic Insertion End Stackable RDS(on) = 1.8 Fast Switching Ease of paralleling Simple Drive Requirements ID = 0.49A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device desi

 9.3. Size:1337K  vishay
 irfd320pbf sihfd320.pdf

IRFD320, SiHFD320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.8 RoHS For Automatic Insertion COMPLIANT Qg (Max.) (nC) 20 End Stackable Qgs (nC) 3.3 Fast Switching Qgd (nC) 11 Ease of Paralleling Configuration Single Simple Drive Requirements D C

 9.4. Size:1335K  vishay
 irfd320 sihfd320.pdf

IRFD320, SiHFD320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.8 RoHS For Automatic Insertion COMPLIANT Qg (Max.) (nC) 20 End Stackable Qgs (nC) 3.3 Fast Switching Qgd (nC) 11 Ease of Paralleling Configuration Single Simple Drive Requirements D C