IRFD310PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFD310PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.9 nS
Cossⓘ - Capacitancia de salida: 34 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.6 Ohm
Paquete / Cubierta: DIP-4
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IRFD310PBF Datasheet (PDF)
irfd310pbf.pdf
PD- 95932IRFD310PbF Lead-Free10/28/04Document Number: 91133 www.vishay.com1IRFD310PbFDocument Number: 91133 www.vishay.com2IRFD310PbFDocument Number: 91133 www.vishay.com3IRFD310PbFDocument Number: 91133 www.vishay.com4IRFD310PbFDocument Number: 91133 www.vishay.com5IRFD310PbFDocument Number: 91133 www.vishay.com6IRFD310PbFDocument Number: 91
irfd310pbf sihfd310.pdf
IRFD310, SiHFD310Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.6RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 17 End StackableQgs (nC) 3.4 Fast SwitchingQgd (nC) 8.5 Ease of ParallelingConfiguration Single Simple Drive Requirement
irfd310.pdf
PD -9.1225IRFD310HEXFET Power MOSFETDynamic dv/dt RatingRepetitive Avalanche RatedVDSS = 400VFor Automatic InsertionEnd StackableRDS(on) = 3.6Fast SwitchingEase of parallelingSimple Drive RequirementsID = 0.35ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device desi
irfd310 sihfd310.pdf
IRFD310, SiHFD310Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.6RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 17 End StackableQgs (nC) 3.4 Fast SwitchingQgd (nC) 8.5 Ease of ParallelingConfiguration Single Simple Drive Requirement
irfd320pbf.pdf
PD- 95930IRFD320PbF Lead-Free10/28/04Document Number: 91134 www.vishay.com1IRFD320PbFDocument Number: 91134 www.vishay.com2IRFD320PbFDocument Number: 91134 www.vishay.com3IRFD320PbFDocument Number: 91134 www.vishay.com4IRFD320PbFDocument Number: 91134 www.vishay.com5IRFD320PbFDocument Number: 91134 www.vishay.com6IRFD320PbFDocument Number: 91
irfd320.pdf
PD -9.1226IRFD320HEXFET Power MOSFETDynamic dv/dt RatingRepetitive Avalanche RatedVDSS = 400VFor Automatic InsertionEnd StackableRDS(on) = 1.8Fast SwitchingEase of parallelingSimple Drive RequirementsID = 0.49ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device desi
irfd320pbf sihfd320.pdf
IRFD320, SiHFD320Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.8RoHS For Automatic InsertionCOMPLIANT Qg (Max.) (nC) 20 End StackableQgs (nC) 3.3 Fast SwitchingQgd (nC) 11 Ease of ParallelingConfiguration Single Simple Drive RequirementsD C
irfd320 sihfd320.pdf
IRFD320, SiHFD320Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.8RoHS For Automatic InsertionCOMPLIANT Qg (Max.) (nC) 20 End StackableQgs (nC) 3.3 Fast SwitchingQgd (nC) 11 Ease of ParallelingConfiguration Single Simple Drive RequirementsD C
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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