IRFG5210 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFG5210
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 1.4 W
Tensión drenaje-fuente (Vds): 200 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 0.68 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Carga de compuerta (Qg): 9.5 nC
Tiempo de elevación (tr): 2.4 nS
Conductancia de drenaje-sustrato (Cd): 56 pF
Resistencia drenaje-fuente RDS(on): 1.6 Ohm
Empaquetado / Estuche: MO-036AB
Búsqueda de reemplazo de MOSFET IRFG5210
IRFG5210 Datasheet (PDF)
1.1. irfg5210.pdf 
Size:189K _upd-mosfet
PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL ® THRU-HOLE (MO-036AB) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID CHANNEL IRFG5210 1.6Ω 0.68A N IRFG5210 1.6Ω -0.68A P HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The MO-036AB efficient geometry design achieves very low
1.2. irfg5210.pdf Size:193K _international_rectifier
PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE (MO-036AB) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID CHANNEL IRFG5210 1.6? 0.68A N IRFG5210 1.6? -0.68A P HEXFET MOSFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The MO-036AB efficient geometry design achieves very low on-state re
5.1. irfg5110.pdf Size:392K _upd-mosfet
PD - 90437D IRFG5110 POWER MOSFET 100V, Combination 2N-2P-CHANNEL ® THRU-HOLE (MO-036AB) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID CHANNEL IRFG5110 0.7Ω 1.0A N IRFG5110 0.7Ω -1.0A P HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state res
5.2. irfg5110.pdf Size:394K _international_rectifier
PD - 90437D IRFG5110 POWER MOSFET 100V, Combination 2N-2P-CHANNEL THRU-HOLE (MO-036AB) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID CHANNEL IRFG5110 0.7? 1.0A N IRFG5110 0.7? -1.0A P HEXFET MOSFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resis- MO-036
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
