IRFG5210 Todos los transistores

 

IRFG5210 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFG5210

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.4 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 0.68 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 9.5 nC

Tiempo de elevación (tr): 2.4 nS

Conductancia de drenaje-sustrato (Cd): 56 pF

Resistencia drenaje-fuente RDS(on): 1.6 Ohm

Empaquetado / Estuche: MO-036AB

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IRFG5210 Datasheet (PDF)

1.1. irfg5210.pdf Size:189K _upd-mosfet

IRFG5210
IRFG5210

PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL ® THRU-HOLE (MO-036AB) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID CHANNEL IRFG5210 1.6Ω 0.68A N IRFG5210 1.6Ω -0.68A P HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The MO-036AB efficient geometry design achieves very low

1.2. irfg5210.pdf Size:193K _international_rectifier

IRFG5210
IRFG5210

PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE (MO-036AB) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID CHANNEL IRFG5210 1.6? 0.68A N IRFG5210 1.6? -0.68A P HEXFET MOSFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The MO-036AB efficient geometry design achieves very low on-state re

 5.1. irfg5110.pdf Size:392K _upd-mosfet

IRFG5210
IRFG5210

PD - 90437D IRFG5110 POWER MOSFET 100V, Combination 2N-2P-CHANNEL ® THRU-HOLE (MO-036AB) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID CHANNEL IRFG5110 0.7Ω 1.0A N IRFG5110 0.7Ω -1.0A P HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state res

5.2. irfg5110.pdf Size:394K _international_rectifier

IRFG5210
IRFG5210

PD - 90437D IRFG5110 POWER MOSFET 100V, Combination 2N-2P-CHANNEL THRU-HOLE (MO-036AB) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID CHANNEL IRFG5110 0.7? 1.0A N IRFG5110 0.7? -1.0A P HEXFET MOSFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resis- MO-036

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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