IRFH4253D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFH4253D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 61 nS
Cossⓘ - Capacitancia de salida: 365 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
Encapsulados: PQFN5X6
Búsqueda de reemplazo de IRFH4253D MOSFET
- Selecciónⓘ de transistores por parámetros
IRFH4253D datasheet
irfh4253dpbf.pdf
FastIRFET IRFH4253DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.60 1.45 m (@VGS = 4.5V) Qg (typical) 10 31 nC ID 35 35 A (@TC = 25 C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low
irfh4253d.pdf
FastIRFET IRFH4253DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.60 1.45 m (@VGS = 4.5V) Qg (typical) 10 31 nC ID 35 35 A (@TC = 25 C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low
irfh4251d.pdf
FastIRFET IRFH4251DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.60 1.10 m (@VGS = 4.5V) Qg (typical) 10 44 nC ID 45 45 A (@TC = 25 C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low
irfh4257d.pdf
FastIRFET IRFH4257DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.70 1.80 m (@VGS = 4.5V) Qg (typical) 9.7 23 nC ID 25 25 A (@TC = 25 C) Applications Control and Synchronous MOSFETs for synchronous buck converters Dual PQFN 5X4 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low c
Otros transistores... IRFH4209D, IRFH4210, IRFH4210D, IRFH4213, IRFH4213D, IRFH4226, IRFH4234, IRFH4251D, IRFB4110, IRFH4255D, IRFH4257D, IRFH5007PBF, IRFH5010PBF, IRFH5015PBF, IRFH5020PBF, IRFH5053PBF, IRFH5106PBF
History: SWHA13N65K2
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