IRFH5020PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFH5020PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 3.6 W
Tensión drenaje-fuente (Vds): 200 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 5.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 5 V
Carga de compuerta (Qg): 36 nC
Tiempo de elevación (tr): 7.7 nS
Conductancia de drenaje-sustrato (Cd): 120 pF
Resistencia drenaje-fuente RDS(on): 0.055 Ohm
Empaquetado / Estuche: PQFN5X6
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IRFH5020PBF Datasheet (PDF)
1.1. irfh5020pbf.pdf 
Size:341K _upd-mosfet
PD -97428 IRFH5020PbF HEXFET® Power MOSFET VDS 200 V RDS(on) max 55 m (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.9 ID 43 A PQFN 5X6 mm (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses
1.2. irfh5020pbf.pdf Size:273K _international_rectifier
IRFH5020PbF HEXFET® Power MOSFET VDS 200 V RDS(on) max 55 mΩ (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.9 Ω ID 34 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses Low The
3.1. irfh5025pbf.pdf Size:272K _international_rectifier
IRFH5025PbF HEXFET® Power MOSFET VDS 250 V RDS(on) max 100 mΩ (@VGS = 10V) Qg (typical) 37 nC RG (typical) 1.6 Ω ID 25 A PQFN 5X6 mm (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses Low Th
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