IRFH5020PBF Todos los transistores

 

IRFH5020PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH5020PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7.7 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm

Encapsulados: PQFN5X6

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IRFH5020PBF datasheet

 ..1. Size:341K  international rectifier
 irfh5020pbf.pdf pdf_icon

IRFH5020PBF

PD -97428 IRFH5020PbF HEXFET Power MOSFET VDS 200 V RDS(on) max 55 m (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.9 ID 43 A PQFN 5X6 mm (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses

 6.1. Size:260K  1
 irfh5020trpbf.pdf pdf_icon

IRFH5020PBF

IRFH5020PbF HEXFET Power MOSFET VDS 200 V RDS(on) max 55 m (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.9 ID 34 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses Low The

 7.1. Size:272K  international rectifier
 irfh5025pbf.pdf pdf_icon

IRFH5020PBF

IRFH5025PbF HEXFET Power MOSFET VDS 250 V RDS(on) max 100 m (@VGS = 10V) Qg (typical) 37 nC RG (typical) 1.6 ID 25 A PQFN 5X6 mm (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses Low Th

 8.1. Size:263K  1
 irfh5006trpbf.pdf pdf_icon

IRFH5020PBF

IRFH5006PbF HEXFET Power MOSFET VDS 60 V RDS(on) max 4.1 m (@VGS = 10V) Qg (typical) 69 nC RG (typical) 1.2 ID 100 A (@Tmb = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 4.1m ) Lower Conduction Losses

MOSTRAR MÁS

Otros transistores... IRFH4234 , IRFH4251D , IRFH4253D , IRFH4255D , IRFH4257D , IRFH5007PBF , IRFH5010PBF , IRFH5015PBF , 10N60 , IRFH5053PBF , IRFH5106PBF , IRFH5206PBF , IRFH5207PBF , IRFH5210PBF , IRFH5250PBF , IRFH5255PBF , IRFH5300PBF .

History: HFP13N50 | QM1830M3 | AON6294

 

 

 

 

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