IRFH5020PBF Todos los transistores

 

IRFH5020PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFH5020PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7.7 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: PQFN5X6
 

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IRFH5020PBF Datasheet (PDF)

 ..1. Size:341K  international rectifier
 irfh5020pbf.pdf pdf_icon

IRFH5020PBF

PD -97428IRFH5020PbFHEXFET Power MOSFETVDS200 VRDS(on) max 55 m(@VGS = 10V)Qg (typical) 36nCRG (typical) 1.9ID 43 APQFN 5X6 mm(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon Lower Conduction Losses

 6.1. Size:260K  1
 irfh5020trpbf.pdf pdf_icon

IRFH5020PBF

IRFH5020PbFHEXFET Power MOSFETVDS 200 VRDS(on) max 55 m(@VGS = 10V)Qg (typical) 36 nCRG (typical) 1.9 ID 34 A(@Tc(Bottom) = 25C)PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon Lower Conduction LossesLow The

 7.1. Size:272K  international rectifier
 irfh5025pbf.pdf pdf_icon

IRFH5020PBF

IRFH5025PbFHEXFET Power MOSFETVDS 250 VRDS(on) max 100 m(@VGS = 10V)Qg (typical) 37 nCRG (typical) 1.6 ID 25 APQFN 5X6 mm(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon Lower Conduction LossesLow Th

 8.1. Size:263K  1
 irfh5006trpbf.pdf pdf_icon

IRFH5020PBF

IRFH5006PbFHEXFET Power MOSFETVDS 60 VRDS(on) max 4.1 m(@VGS = 10V)Qg (typical) 69 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C)PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 4.1m) Lower Conduction Losses

MOSTRAR MÁS

Otros transistores... IRFH4234 , IRFH4251D , IRFH4253D , IRFH4255D , IRFH4257D , IRFH5007PBF , IRFH5010PBF , IRFH5015PBF , IRFB4227 , IRFH5053PBF , IRFH5106PBF , IRFH5206PBF , IRFH5207PBF , IRFH5210PBF , IRFH5250PBF , IRFH5255PBF , IRFH5300PBF .

History: CEB15A03

 

 
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