IRLZ44N Todos los transistores

PD - 9.1346B IRLZ44N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.022 Fast Switching G Fully Avalanche Rated ID = 47A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistan

PD - 94831 IRLZ44NPbF HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 55V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.022 l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 47A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRLZ44N IIRLZ44N FEATURES Static drain-source on-resistance RDS(on) 22m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R

IRLZ44NS/LPbF l Logic-Level Gate Drive l Advanced Process Technology D l Surface Mount (IRLZ44NS) DSS l Low-profile through-hole (IRLZ44NL) l 175 C Operating Temperature DS(on) l Fast Switching G l Fully Avalanche Rated D l Lead-Free S Description

IRLZ44NS/LPbF l Logic-Level Gate Drive l Advanced Process Technology D l Surface Mount (IRLZ44NS) DSS l Low-profile through-hole (IRLZ44NL) l 175 C Operating Temperature DS(on) l Fast Switching G l Fully Avalanche Rated D l Lead-Free S Description

PD - 95539A IRLZ44ZPbF IRLZ44ZSPbF IRLZ44ZLPbF Features Logic Level HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 13.5m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 51A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achi

PD - 94886 IRLZ44PbF Lead-Free 12/11/03 Document Number 91328 www.vishay.com 1 IRLZ44PbF Document Number 91328 www.vishay.com 2 IRLZ44PbF Document Number 91328 www.vishay.com 3 IRLZ44PbF Document Number 91328 www.vishay.com 4 IRLZ44PbF Document Number 91328 www.vishay.com 5 IRLZ44PbF Document Number 91328 www.vishay.com 6 IRLZ44PbF TO-220AB Package Outline

PD - 97682 AUTOMOTIVE GRADE AUIRLZ44Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V(BR)DSS 55V 175 C Operating Temperature Fast Switching RDS(on) typ. 11m G Repetitive Avalanche Allowed up to max. 13.5m Tjmax S Lead-Free, RoHS Compliant ID 51A Automotive Qualified * Description D Specifically

PD - 95539A IRLZ44ZPbF IRLZ44ZSPbF IRLZ44ZLPbF Features Logic Level HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 13.5m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 51A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achi

PD- 95393 IRLZ44SPbF Lead-Free 06/10/04 Document Number 91329 www.vishay.com 1 IRLZ44SPbF Document Number 91329 www.vishay.com 2 IRLZ44SPbF Document Number 91329 www.vishay.com 3 IRLZ44SPbF Document Number 91329 www.vishay.com 4 IRLZ44SPbF Document Number 91329 www.vishay.com 5 IRLZ44SPbF Document Number 91329 www.vishay.com 6 IRLZ44SPbF Document Number 91

IRLZ44A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS(on) = 0.025 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 50 A Lower Input Capacitance Improved Gate Charge TO-220 Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.02 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Max

IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Surface Mount RDS(on) ( )VGS = 5.0 V 0.028 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Logic-Level Gate Drive Qgs (nC) 12 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 43 175 C Operating

IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.028 RoHS* RDS(on) Specified at VGS = 4 V and 5 V Qg (Max.) (nC) 66 COMPLIANT 175 C Operating Temperature Qgs (nC) 12 Fast Switching Qgd (nC) 43 Configuration Single Ease of Paralleling Si

IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.028 RoHS* RDS(on) Specified at VGS = 4 V and 5 V Qg (Max.) (nC) 66 COMPLIANT 175 C Operating Temperature Qgs (nC) 12 Fast Switching Qgd (nC) 43 Configuration Single Ease of Paralleling Si

IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Surface Mount RDS(on) ( )VGS = 5.0 V 0.028 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Logic-Level Gate Drive Qgs (nC) 12 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 43 175 C Operating

IRLZ44PBF www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.024 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Di

Isc N-Channel MOSFET Transistor IRLZ44ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRLZ44Z IIRLZ44Z FEATURES Static drain-source on-resistance RDS(on) 13.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM