IRFH7190 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFH7190
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 3.6 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 15 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 3.6 V
   Carga de la puerta (Qg): 26 nC
   Tiempo de subida (tr): 6.1 nS
   Conductancia de drenaje-sustrato (Cd): 836 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0075 Ohm
   Paquete / Cubierta: PQFN5X6

Búsqueda de reemplazo de MOSFET IRFH7190

IRFH7190 Datasheet (PDF)

..1. Size:505K international rectifier
irfh7190.pdf

FastIRFET IRFH7190PbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 7.5 m(@ VGS = 10V) Qg (typical) 26 nC Rg (typical) 1.0 ID 82 A(@TC (Bottom) = 25C) PQFN 5X6 mm Applications Optimized for Secondary Side Synchronous Rectification Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Hot Swap and Active O-R

7.1. Size:484K international rectifier
irfh7191.pdf

FastIRFET IRFH7191PbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 8.0 m(@ VGS = 10V) Qg (typical) 26 nC Rg (typical) 1.0 ID 80 A(@TC (Bottom) = 25C) PQFN 5X6 mm Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier Hot Swap and Active O-Ring Features

7.2. Size:756K international rectifier
irfh7194.pdf

FastIRFET IRFH7194PbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 16.4 m (@ VGS = 10V) Qg (typical) 13 nC Rg (typical) 2.1 ID 35 A (@TC (Bottom) = 25C) PQFN 5X6 mm Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier Features Benefits Low RDS(ON) (

8.1. Size:511K international rectifier
irfh7188.pdf

FastIRFET IRFH7188PbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 6.0 m(@ VGS = 10V) Qg (typical) 33 nC Rg (typical) 0.92 ID 105 A(@TC (Bottom) = 25C) PQFN 5X6 mm Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier Hot Swap and Active O-Ring Feature

8.2. Size:539K international rectifier
irfh7185.pdf

FastIRFET IRFH7185PbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 5.2 m(@ VGS = 10V) Qg (typical) 36 nC Rg (typical) 1.2 ID 123 A(@TC (Bottom) = 25C) PQFN 5X6 mm Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier Hot Swap and Active O-Ring Features

8.3. Size:234K international rectifier
irfh7110.pdf

IRFH7110PbFHEXFET Power MOSFETVDS 100 VVgs max 20 VRDS(on) max 13.5 m(@VGS = 10V)58 nCQG (typical)RG (typical) 0.6PQFN 5X6 mmID 50 A(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsFeatures BenefitsLow RDSon (

8.4. Size:267K international rectifier
irfh7107.pdf

IRFH7107PbFHEXFET Power MOSFETVDS75 VRDS(on) max 8.5 m(@VGS = 10V)Qg (typical)48nCRG (typical)0.6ID 75 APQFN 5X6 mm(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsFeatures BenefitsLow RDSon (

8.5. Size:510K international rectifier
irfh7184.pdf

FastIRFET IRFH7184PbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 4.8 m(@ VGS = 10V) Qg (typical) 36 nC Rg (typical) 1.2 ID 128 A(@TC (Bottom) = 25C) PQFN 5X6 mm Applications Optimized for Secondary Side Synchronous Rectification Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Hot Swap and Active

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Liste

Recientemente añadidas las descripciónes de los transistores: