IRFH7190 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFH7190
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 3.6 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3.6 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 26 nC
trⓘ - Время нарастания: 6.1 ns
Cossⓘ - Выходная емкость: 836 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
Тип корпуса: PQFN5X6
IRFH7190 Datasheet (PDF)
irfh7190.pdf
FastIRFET IRFH7190PbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 7.5 m(@ VGS = 10V) Qg (typical) 26 nC Rg (typical) 1.0 ID 82 A(@TC (Bottom) = 25C) PQFN 5X6 mm Applications Optimized for Secondary Side Synchronous Rectification Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Hot Swap and Active O-R
irfh7191.pdf
FastIRFET IRFH7191PbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 8.0 m(@ VGS = 10V) Qg (typical) 26 nC Rg (typical) 1.0 ID 80 A(@TC (Bottom) = 25C) PQFN 5X6 mm Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier Hot Swap and Active O-Ring Features
irfh7194.pdf
FastIRFET IRFH7194PbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 16.4 m (@ VGS = 10V) Qg (typical) 13 nC Rg (typical) 2.1 ID 35 A (@TC (Bottom) = 25C) PQFN 5X6 mm Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier Features Benefits Low RDS(ON) (
irfh7188.pdf
FastIRFET IRFH7188PbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 6.0 m(@ VGS = 10V) Qg (typical) 33 nC Rg (typical) 0.92 ID 105 A(@TC (Bottom) = 25C) PQFN 5X6 mm Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier Hot Swap and Active O-Ring Feature
irfh7185.pdf
FastIRFET IRFH7185PbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 5.2 m(@ VGS = 10V) Qg (typical) 36 nC Rg (typical) 1.2 ID 123 A(@TC (Bottom) = 25C) PQFN 5X6 mm Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier Hot Swap and Active O-Ring Features
irfh7110.pdf
IRFH7110PbFHEXFET Power MOSFETVDS 100 VVgs max 20 VRDS(on) max 13.5 m(@VGS = 10V)58 nCQG (typical)RG (typical) 0.6PQFN 5X6 mmID 50 A(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsFeatures BenefitsLow RDSon (
irfh7107.pdf
IRFH7107PbFHEXFET Power MOSFETVDS75 VRDS(on) max 8.5 m(@VGS = 10V)Qg (typical)48nCRG (typical)0.6ID 75 APQFN 5X6 mm(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsFeatures BenefitsLow RDSon (
irfh7184.pdf
FastIRFET IRFH7184PbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 4.8 m(@ VGS = 10V) Qg (typical) 36 nC Rg (typical) 1.2 ID 128 A(@TC (Bottom) = 25C) PQFN 5X6 mm Applications Optimized for Secondary Side Synchronous Rectification Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Hot Swap and Active
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918