AM30N06-65DA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM30N06-65DA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 61 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm

Encapsulados: TO-252

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AM30N06-65DA datasheet

 ..1. Size:291K  analog power
 am30n06-65da.pdf pdf_icon

AM30N06-65DA

Analog Power AM30N06-65DA N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 65 @ VGS = 10V 23 Low thermal impedance 60 78 @ VGS = 4.5V 21 Fast switching speed Typical Applications Automotive Systems DC/DC Conversion Circuits Battery Powered Power Tools ABSOLUTE MAXIMUM RATINGS

 6.1. Size:203K  analog power
 am30n06-39ie.pdf pdf_icon

AM30N06-65DA

Analog Power AM30N06-39IE N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 38 @ VGS = 10V 30 converters and power management in portable and 60 50 @ VGS = 4.5V 26 batt

 6.2. Size:175K  analog power
 am30n06-39d.pdf pdf_icon

AM30N06-65DA

Analog Power AM30N06-39D N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 38 @ VGS = 10V 30 converters and power management in portable and 60 50 @ VGS = 4.5V 26 batte

 6.3. Size:1346K  cn vbsemi
 am30n06-39d.pdf pdf_icon

AM30N06-65DA

AM30N06-39D www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n

MOSTRAR MÁS

Otros transistores... AM2N7002W, AM3015, AM30N02-40D, AM30N02-59D, AM30N03-40D, AM30N03-59D, AM30N06-39D, AM30N06-39IE, IRF1407, AM30N08-80D, AM30N10-50D, AM30N10-70D, AM30N10-70DE, AM30N10-78D, AM30N15-60D, AM30N20-400PCFM, AM30N20-78D