AM30N06-65DA Specs and Replacement

Type Designator: AM30N06-65DA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 61 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: TO-252

AM30N06-65DA substitution

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AM30N06-65DA datasheet

 ..1. Size:291K  analog power
 am30n06-65da.pdf pdf_icon

AM30N06-65DA

Analog Power AM30N06-65DA N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 65 @ VGS = 10V 23 Low thermal impedance 60 78 @ VGS = 4.5V 21 Fast switching speed Typical Applications Automotive Systems DC/DC Conversion Circuits Battery Powered Power Tools ABSOLUTE MAXIMUM RATINGS... See More ⇒

 6.1. Size:203K  analog power
 am30n06-39ie.pdf pdf_icon

AM30N06-65DA

Analog Power AM30N06-39IE N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 38 @ VGS = 10V 30 converters and power management in portable and 60 50 @ VGS = 4.5V 26 batt... See More ⇒

 6.2. Size:175K  analog power
 am30n06-39d.pdf pdf_icon

AM30N06-65DA

Analog Power AM30N06-39D N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 38 @ VGS = 10V 30 converters and power management in portable and 60 50 @ VGS = 4.5V 26 batte... See More ⇒

 6.3. Size:1346K  cn vbsemi
 am30n06-39d.pdf pdf_icon

AM30N06-65DA

AM30N06-39D www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n... See More ⇒

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Detailed specifications: AM2N7002W, AM3015, AM30N02-40D, AM30N02-59D, AM30N03-40D, AM30N03-59D, AM30N06-39D, AM30N06-39IE, IRF1407, AM30N08-80D, AM30N10-50D, AM30N10-70D, AM30N10-70DE, AM30N10-78D, AM30N15-60D, AM30N20-400PCFM, AM30N20-78D

Keywords - AM30N06-65DA MOSFET specs

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