AM30N08-80D Todos los transistores

 ..1. Size:294K  analog power
 am30n08-80d.pdf

Analog Power AM30N08-80D N-Channel 80-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 82 @ VGS = 10V 21 Low thermal impedance 80 110 @ VGS = 4.5V 18 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost conv

 8.1. Size:138K  analog power
 am30n02-40d.pdf

Analog Power AM30N02-40D N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( ) ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 29 @ VGS = 4.5V 34 circuitry. Typical applications are PWMDC-DC 20 43 @ VGS = 2.5V 22 converters

 8.2. Size:139K  analog power
 am30n02-59d.pdf

Analog Power AM30N02-59D N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( ) ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 59 @ VGS = 4.5V 24 circuitry. Typical applications are PWMDC-DC 20 88 @ VGS = 2.5V 20 converters

 8.3. Size:153K  analog power
 am30n03-59d.pdf

Analog Power AM30N03-59D N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( ) ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 59 @ VGS = 10V 24 circuitry. Typical applications are PWMDC-DC 30 88 @ VGS = 4.5V 20 converters,

 8.4. Size:203K  analog power
 am30n06-39ie.pdf

Analog Power AM30N06-39IE N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 38 @ VGS = 10V 30 converters and power management in portable and 60 50 @ VGS = 4.5V 26 batt

 8.5. Size:291K  analog power
 am30n06-65da.pdf

Analog Power AM30N06-65DA N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 65 @ VGS = 10V 23 Low thermal impedance 60 78 @ VGS = 4.5V 21 Fast switching speed Typical Applications Automotive Systems DC/DC Conversion Circuits Battery Powered Power Tools ABSOLUTE MAXIMUM RATINGS

 8.6. Size:293K  analog power
 am30n03-40d.pdf

Analog Power AM30N03-40D N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 29 @ VGS = 10V 34 Low thermal impedance 30 43 @ VGS = 4.5V 28 Fast switching speed Typical Applications Automotive Systems DC/DC Conversion Circuits Battery Powered Power Tools ABSOLUTE MAXIMUM RATINGS

 8.7. Size:175K  analog power
 am30n06-39d.pdf

Analog Power AM30N06-39D N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 38 @ VGS = 10V 30 converters and power management in portable and 60 50 @ VGS = 4.5V 26 batte

 8.8. Size:1346K  cn vbsemi
 am30n06-39d.pdf

AM30N06-39D www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n