All MOSFET. AM30N08-80D Datasheet

 

AM30N08-80D Datasheet and Replacement


   Type Designator: AM30N08-80D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm
   Package: TO-252
 

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AM30N08-80D Datasheet (PDF)

 ..1. Size:294K  analog power
am30n08-80d.pdf pdf_icon

AM30N08-80D

Analog Power AM30N08-80DN-Channel 80-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)82 @ VGS = 10V21 Low thermal impedance 80110 @ VGS = 4.5V18 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost conv

 8.1. Size:138K  analog power
am30n02-40d.pdf pdf_icon

AM30N08-80D

Analog Power AM30N02-40DN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 29 @ VGS = 4.5V 34circuitry. Typical applications are PWMDC-DC 2043 @ VGS = 2.5V 22converters

 8.2. Size:139K  analog power
am30n02-59d.pdf pdf_icon

AM30N08-80D

Analog Power AM30N02-59DN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 59 @ VGS = 4.5V 24circuitry. Typical applications are PWMDC-DC 2088 @ VGS = 2.5V 20converters

 8.3. Size:153K  analog power
am30n03-59d.pdf pdf_icon

AM30N08-80D

Analog Power AM30N03-59DN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 59 @ VGS = 10V 24circuitry. Typical applications are PWMDC-DC 3088 @ VGS = 4.5V 20converters,

Datasheet: AM3015 , AM30N02-40D , AM30N02-59D , AM30N03-40D , AM30N03-59D , AM30N06-39D , AM30N06-39IE , AM30N06-65DA , 5N65 , AM30N10-50D , AM30N10-70D , AM30N10-70DE , AM30N10-78D , AM30N15-60D , AM30N20-400PCFM , AM30N20-78D , AM30N25-270P .

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