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AM30N10-70DE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM30N10-70DE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13.6 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.078 Ohm
   Paquete / Cubierta: TO-252
 

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AM30N10-70DE Datasheet (PDF)

 ..1. Size:143K  analog power
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AM30N10-70DE

Analog Power AM30N10-70DEN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m) ID (A)(rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10V 21converters and power management in portable and 10092 @ VGS = 4.5V 20

 3.1. Size:296K  analog power
am30n10-70d.pdf pdf_icon

AM30N10-70DE

Analog Power AM30N10-70DN-Channel 100-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)78 @ VGS = 10V26 Low thermal impedance 10092 @ VGS = 4.5V25 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost co

 5.1. Size:86K  analog power
am30n10-78d.pdf pdf_icon

AM30N10-70DE

Analog Power AM30N10-78DN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10V 21converters and power management in portable and 10098 @ VGS = 4.5V 19bat

 6.1. Size:65K  analog power
am30n10-50d.pdf pdf_icon

AM30N10-70DE

Analog Power AM30N10-50DN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 50 @ VGS = 10V 26converters and power management in portable and 10059 @ VGS = 4.5V 24bat

Otros transistores... AM30N03-40D , AM30N03-59D , AM30N06-39D , AM30N06-39IE , AM30N06-65DA , AM30N08-80D , AM30N10-50D , AM30N10-70D , SKD502T , AM30N10-78D , AM30N15-60D , AM30N20-400PCFM , AM30N20-78D , AM30N25-270P , AM30P06-40D , AM30P06-45D , AM30P10-80D .

History: MPVA7N65F | RJK0329DPB-01 | ME95N03T | AO4800 | GM2302 | AON7518 | IPB77N06S2-12

 

 
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