AM30P06-40D Todos los transistores

 

AM30P06-40D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM30P06-40D
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 29 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 181 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: TO-252
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AM30P06-40D Datasheet (PDF)

 ..1. Size:304K  analog power
am30p06-40d.pdf pdf_icon

AM30P06-40D

Analog Power AM30P06-40DP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)40 @ VGS = -10V -29 Low thermal impedance -6055 @ VGS = -4.5V -25 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX

 5.1. Size:138K  analog power
am30p06-45d.pdf pdf_icon

AM30P06-40D

Analog Power AM30P06-45DP-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) m()ID (A)this device ideal for use in power management 49 @ VGS = -10V 28circuitry. Typical applications are PWM DC-DC -60converters, power management

 9.1. Size:183K  analog power
am30p10-80d.pdf pdf_icon

AM30P06-40D

Analog Power AM30P10-80DP-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 80 @ VGS = -10V 25converters and power management in portable and -100battery-powered produ

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