AM30P06-40D Datasheet and Replacement
Type Designator: AM30P06-40D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id| ⓘ - Maximum Drain Current: 29 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 29 nC
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 181 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO-252
AM30P06-40D substitution
AM30P06-40D Datasheet (PDF)
am30p06-40d.pdf

Analog Power AM30P06-40DP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)40 @ VGS = -10V -29 Low thermal impedance -6055 @ VGS = -4.5V -25 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX
am30p06-45d.pdf

Analog Power AM30P06-45DP-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) m()ID (A)this device ideal for use in power management 49 @ VGS = -10V 28circuitry. Typical applications are PWM DC-DC -60converters, power management
am30p10-80d.pdf

Analog Power AM30P10-80DP-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 80 @ VGS = -10V 25converters and power management in portable and -100battery-powered produ
Datasheet: AM30N10-50D , AM30N10-70D , AM30N10-70DE , AM30N10-78D , AM30N15-60D , AM30N20-400PCFM , AM30N20-78D , AM30N25-270P , IRFB31N20D , AM30P06-45D , AM30P10-80D , AM3400 , AM3400A , AM3400N , AM3401 , AM3402N , AM3403P .
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