ITF86116SQT Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ITF86116SQT 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 63 nS
Cossⓘ - Capacitancia de salida: 390 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Encapsulados: TSSOP8
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ITF86116SQT datasheet
itf86116sqt.pdf
ITF86116SQT Data Sheet March 2000 File Number 4808.2 10A, 30V, 0.012 Ohm, N-Channel, Logic Features Level, Power MOSFET Ultra Low On-Resistance - rDS(ON) = 0.012 , VGS = 10V Packaging - rDS(ON) = 0.016 , VGS = 4.5V TSSOP8 Gate to Source Protection Diode Simulation Models - Temperature Compensated PSPICE and SABER 5 Electrical Models 1 - Spice and SABER Thermal Im
itf86110dk8t.pdf
ITF86110DK8T Data Sheet January 2000 File Number 4807.2 7.5A, 30V, 0.025 Ohm, Dual N-Channel, Features Logic Level, Power MOSFET Ultra Low On-Resistance - rDS(ON) = 0.025 , VGS = 10V Packaging [ /Title - rDS(ON) = 0.034 , VGS = 4.5V SO8 (JEDEC MS-012AA) (HUF7 - rDS(ON) = 0.042 , VGS = 4.0V 6400S Gate to Source Protection Diode BRANDING DASH K8) Simulation Model
itf86182sk8t.pdf
ITF86182SK8T Data Sheet January 2000 File Number 4797.2 11A, 30V, 0.0115 Ohm, P-Channel, Logic Features Level, Power MOSFET Ultra Low On-Resistance [ /Title - rDS(ON) = 0.0115 , VGS = -10V Packaging (ITF86 - rDS(ON) = 0.016 , VGS = -4.5V SO8 (JEDEC MS-012AA) 182SK - rDS(ON) = 0.0175 , VGS = -4V 8T) BRANDING DASH Gate to Source Protection Diode /Sub- Simulation M
itf86130sk8t.pdf
ITF86130SK8T TM Data Sheet June 2000 File Number 4798.4 14A, 30V, 0.0078 Ohm, N-Channel, Logic Features Level, Power MOSFET Ultra Low On-Resistance - rDS(ON) = 0.0078 , VGS = 10V Packaging - rDS(ON) = 0.010 , VGS = 4.5V SO8 (JEDEC MS-012AA) - rDS(ON) = 0.012 , VGS = 4.0V BRANDING DASH Gate to Source Protection Diode Simulation Models - Temperature Compensated PSP
Otros transistores... IRLZ34NS, IRLZ40, IRLZ44, IRLZ44A, IRLZ44N, IRLZ44NL, IRLZ44NS, ITF86110DK8T, 13N50, ITF86130SK8T, ITF86172SK8T, ITF86174SQT, ITF86182SK8T, ITF87008DQT, ITF87012SVT, ITF87052SVT, ITF87056DQT
Parámetros del MOSFET. Cómo se afectan entre sí.
History: 2N60G-T60-K | IRFH8318PBF | IRFB3806
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