ITF86116SQT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ITF86116SQT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 63 nS
   Cossⓘ - Capacitancia de salida: 390 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: TSSOP8

Búsqueda de reemplazo de MOSFET ITF86116SQT

ITF86116SQT Datasheet (PDF)

..1. Size:198K intersil
itf86116sqt.pdf

ITF86116SQTData Sheet March 2000 File Number 4808.210A, 30V, 0.012 Ohm, N-Channel, Logic FeaturesLevel, Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.012, VGS = 10VPackaging- rDS(ON) = 0.016, VGS = 4.5VTSSOP8 Gate to Source Protection Diode Simulation Models- Temperature Compensated PSPICE and SABER5 Electrical Models1 - Spice and SABER Thermal Im

7.1. Size:199K intersil
itf86110dk8t.pdf

ITF86110DK8TData Sheet January 2000 File Number 4807.27.5A, 30V, 0.025 Ohm, Dual N-Channel, FeaturesLogic Level, Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.025, VGS = 10VPackaging[ /Title- rDS(ON) = 0.034, VGS = 4.5VSO8 (JEDEC MS-012AA)(HUF7- rDS(ON) = 0.042, VGS = 4.0V6400S Gate to Source Protection DiodeBRANDING DASHK8) Simulation Model

8.1. Size:172K intersil
itf86182sk8t.pdf

ITF86182SK8TData Sheet January 2000 File Number 4797.211A, 30V, 0.0115 Ohm, P-Channel, Logic FeaturesLevel, Power MOSFET Ultra Low On-Resistance[ /Title- rDS(ON) = 0.0115, VGS = -10VPackaging(ITF86- rDS(ON) = 0.016, VGS = -4.5VSO8 (JEDEC MS-012AA)182SK - rDS(ON) = 0.0175, VGS = -4V8T) BRANDING DASH Gate to Source Protection Diode/Sub- Simulation M

8.2. Size:173K intersil
itf86130sk8t.pdf

ITF86130SK8TTMData Sheet June 2000 File Number 4798.414A, 30V, 0.0078 Ohm, N-Channel, Logic FeaturesLevel, Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.0078, VGS = 10VPackaging- rDS(ON) = 0.010, VGS = 4.5VSO8 (JEDEC MS-012AA)- rDS(ON) = 0.012, VGS = 4.0VBRANDING DASH Gate to Source Protection Diode Simulation Models- Temperature Compensated PSP

8.3. Size:173K intersil
itf86172sk8t.pdf

ITF86172SK8TData Sheet January 2000 File Number 4809.110A, 30V, 0.016 Ohm, P-Channel, Logic FeaturesLevel, Power MOSFET Ultra Low On-Resistance[ /Title- rDS(ON) = 0.016, VGS = -10VPackaging(HUF7- rDS(ON) = 0.023, VGS = -4.5VSO8 (JEDEC MS-012AA)6400S - rDS(ON) = 0.026, VGS = -4VBRANDING DASH Gate to Source Protection DiodeK8) Simulation Models/Su

8.4. Size:207K intersil
itf86174sqt.pdf

ITF86174SQTData Sheet March 2000 File Number 4799.39A, 30V, 0.016 Ohm, P-Channel, Logic FeaturesLevel, Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.016, VGS = -10VPackaging- rDS(ON) = 0.024, VGS = -4.5VTSSOP-8- rDS(ON) = 0.027, VGS = -4V Gate to Source Protection Diode5 Simulation Models1- Temperature Compensated PSPICE and SABER243E

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