AM3407 Todos los transistores

 

AM3407 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM3407

Código: E3

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.5 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 4.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Carga de compuerta (Qg): 6.5 nC

Tiempo de elevación (tr): 8.4 nS

Conductancia de drenaje-sustrato (Cd): 102 pF

Resistencia drenaje-fuente RDS(on): 0.054 Ohm

Empaquetado / Estuche: SOT-23

Búsqueda de reemplazo de MOSFET AM3407

 

AM3407 Datasheet (PDF)

1.1. am3407pe.pdf Size:507K _analog_power

AM3407
AM3407

Analog Power AM3407PE P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID(A) • Low r trench technology DS(on) 34 @ VGS = -4.5V -5 • Low thermal impedance -20 48 @ VGS = -2.5V -3 • Fast switching speed Typical Applications: • Battery Powered Instruments • Portable Computing • Mobile Phones • GPS Units and Media Players Drain: 1,2,5,6

1.2. am3407.pdf Size:522K _ait_semi

AM3407
AM3407

AiT Semiconductor Inc. AM3407 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM3407 is the P-Channel logic enhancement  -30V/-4.3A, R =44mΩ(typ.)@V =-10V DS(ON) GS mode power field effect transistor is produced using  -30V/-3.0A, R =70mΩ(typ.)@V =-4.5V DS(ON) GS high cell density. Advanced trench technology to  Super high density c

 5.1. am3400n.pdf Size:319K _analog_power

AM3407
AM3407

Analog Power AM3400N N-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID (A) • Low r trench technology DS(on) 950 @ VGS = 10V 1.2 • Low thermal impedance 200 1100 @ VGS = 5.5V 1.1 • Fast switching speed Typical Applications: • White LED boost converters TSOP-6 • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOL

5.2. am3406n.pdf Size:136K _analog_power

AM3407
AM3407

Analog Power AM3406N N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) PRODUCT SUMMARY assures minimal power loss and conserves VDS (V) rDS(on) (Ω)ID (A) energy, making this device ideal for use in 0.032 @ VGS = 10 V 6.3 power management circuitry. Typical 30 applications are power switch, power 0.044 @ VGS = 4.5V 5

 5.3. am3403p.pdf Size:91K _analog_power

AM3407
AM3407

Analog Power AM3403P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize a high cell density trench process to VDS (V) rDS(on) (O) ID (A) provide low rDS(on) and to ensure minimal 0.056 @ V = -10V -4.0 power loss and heat dissipation. Typical GS -30 applications are DC-DC converters and 0.086 @ V = -4.5V -3.4 GS power management in portabl

5.4. am3405p.pdf Size:218K _analog_power

AM3407
AM3407

Analog Power AM3405P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making VDS (V) rDS(on) m(Ω)ID (A) this device ideal for use in power management 56 @ VGS = -4.5V -4.9 circuitry. Typical applications are PWMDC-DC converters, power management in po

 5.5. am3402n.pdf Size:237K _analog_power

AM3407
AM3407

Analog Power AM3402N N-Channel Logic Level MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize a high cell density trench process to VDS (V) rDS(on) (Ω) ID (A) provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical 0.027 @ VGS = 10 V 6.3 applications are DC-DC converters and power 30 0.035 @ VGS = 4.5V 5.5 management in portable an

5.6. am3406.pdf Size:403K _ait_semi

AM3407
AM3407

AiT Semiconductor Inc. AM3406 www.ait-ic.com 30V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM3406 is the N-Channel logic enhancement  30V/6.0A, R = 20mΩ(typ.) @V = 10V DS(ON) GS mode power field effect transistor is produced using  30V/4.8A, R = 27mΩ(typ.) @V = 4.5V DS(ON) GS high cell density. Advanced trench technology to  Super high density cell de

5.7. am3400.pdf Size:327K _ait_semi

AM3407
AM3407

AiT Semiconductor Inc. AM3400 www.ait-ic.com MOSFET 30V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM3400 is the N-Channel logic enhancement  30V/5.8A, R =28mΩ(typ.)@V =10V DS(ON) GS mode power field effect transistor is produced using  30V/5.0A, R =30mΩ(typ.)@V =4.5V DS(ON) GS high cell density. Advanced trench technology to  30V/3.5A, R =40mΩ(typ.)@V =2.

5.8. am3401.pdf Size:555K _ait_semi

AM3407
AM3407

AiT Semiconductor Inc. AM3401 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM3401 is the P-Channel logic enhancement  -30V/-4.3A, R =47mΩ(typ.)@V =-10V DS(ON) GS mode power field effect transistor is produced using  -30V/-3.5A, R =55mΩ(typ.)@V =-4.5V DS(ON) GS high cell density. Advanced trench technology to  -30V/-2.5A, R =70mΩ(typ.

5.9. am3400a.pdf Size:326K _ait_semi

AM3407
AM3407

AiT Semiconductor Inc. AM3400A www.ait-ic.com MOSFET 30V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM3400A is the N-Channel logic enhancement  30V/5.8A, R =22mΩ(typ.)@V =10V DS(ON) GS mode power field effect transistor is produced using  30V/5.0A, R =25mΩ(typ.)@V =4.5V DS(ON) GS high cell density. Advanced trench technology to  30V/3.5A, R =31mΩ(typ.)@V =

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