All MOSFET. AM3407 Datasheet

 

AM3407 MOSFET. Datasheet pdf. Equivalent

Type Designator: AM3407

Marking Code: E3

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.5 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 4.3 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 6.5 nC

Rise Time (tr): 8.4 nS

Drain-Source Capacitance (Cd): 102 pF

Maximum Drain-Source On-State Resistance (Rds): 0.054 Ohm

Package: SOT-23

AM3407 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AM3407 Datasheet (PDF)

1.1. am3407pe.pdf Size:507K _upd-mosfet

AM3407
AM3407

Analog Power AM3407PE P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID(A) • Low r trench technology DS(on) 34 @ VGS = -4.5V -5 • Low thermal impedance -20 48 @ VGS = -2.5V -3 • Fast switching speed Typical Applications: • Battery Powered Instruments • Portable Computing • Mobile Phones • GPS Units and Media Players Drain: 1,2,5,6

1.2. am3407.pdf Size:522K _upd-mosfet

AM3407
AM3407

AiT Semiconductor Inc. AM3407 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM3407 is the P-Channel logic enhancement  -30V/-4.3A, R =44mΩ(typ.)@V =-10V DS(ON) GS mode power field effect transistor is produced using  -30V/-3.0A, R =70mΩ(typ.)@V =-4.5V DS(ON) GS high cell density. Advanced trench technology to  Super high density c

 5.1. am3400.pdf Size:327K _upd-mosfet

AM3407
AM3407

AiT Semiconductor Inc. AM3400 www.ait-ic.com MOSFET 30V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM3400 is the N-Channel logic enhancement  30V/5.8A, R =28mΩ(typ.)@V =10V DS(ON) GS mode power field effect transistor is produced using  30V/5.0A, R =30mΩ(typ.)@V =4.5V DS(ON) GS high cell density. Advanced trench technology to  30V/3.5A, R =40mΩ(typ.)@V =2.

5.2. am3406.pdf Size:403K _upd-mosfet

AM3407
AM3407

AiT Semiconductor Inc. AM3406 www.ait-ic.com 30V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM3406 is the N-Channel logic enhancement  30V/6.0A, R = 20mΩ(typ.) @V = 10V DS(ON) GS mode power field effect transistor is produced using  30V/4.8A, R = 27mΩ(typ.) @V = 4.5V DS(ON) GS high cell density. Advanced trench technology to  Super high density cell de

 5.3. am3400a.pdf Size:326K _upd-mosfet

AM3407
AM3407

AiT Semiconductor Inc. AM3400A www.ait-ic.com MOSFET 30V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM3400A is the N-Channel logic enhancement  30V/5.8A, R =22mΩ(typ.)@V =10V DS(ON) GS mode power field effect transistor is produced using  30V/5.0A, R =25mΩ(typ.)@V =4.5V DS(ON) GS high cell density. Advanced trench technology to  30V/3.5A, R =31mΩ(typ.)@V =

5.4. am3401.pdf Size:555K _upd-mosfet

AM3407
AM3407

AiT Semiconductor Inc. AM3401 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM3401 is the P-Channel logic enhancement  -30V/-4.3A, R =47mΩ(typ.)@V =-10V DS(ON) GS mode power field effect transistor is produced using  -30V/-3.5A, R =55mΩ(typ.)@V =-4.5V DS(ON) GS high cell density. Advanced trench technology to  -30V/-2.5A, R =70mΩ(typ.

 5.5. am3400n.pdf Size:319K _upd-mosfet

AM3407
AM3407

Analog Power AM3400N N-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID (A) • Low r trench technology DS(on) 950 @ VGS = 10V 1.2 • Low thermal impedance 200 1100 @ VGS = 5.5V 1.1 • Fast switching speed Typical Applications: • White LED boost converters TSOP-6 • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOL

5.6. am3405p.pdf Size:218K _upd-mosfet

AM3407
AM3407

Analog Power AM3405P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making VDS (V) rDS(on) m(Ω)ID (A) this device ideal for use in power management 56 @ VGS = -4.5V -4.9 circuitry. Typical applications are PWMDC-DC converters, power management in po

5.7. am3406n.pdf Size:136K _upd-mosfet

AM3407
AM3407

Analog Power AM3406N N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) PRODUCT SUMMARY assures minimal power loss and conserves VDS (V) rDS(on) (Ω)ID (A) energy, making this device ideal for use in 0.032 @ VGS = 10 V 6.3 power management circuitry. Typical 30 applications are power switch, power 0.044 @ VGS = 4.5V 5

5.8. am3403p.pdf Size:91K _upd-mosfet

AM3407
AM3407

Analog Power AM3403P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize a high cell density trench process to VDS (V) rDS(on) (O) ID (A) provide low rDS(on) and to ensure minimal 0.056 @ V = -10V -4.0 power loss and heat dissipation. Typical GS -30 applications are DC-DC converters and 0.086 @ V = -4.5V -3.4 GS power management in portabl

5.9. am3402n.pdf Size:237K _upd-mosfet

AM3407
AM3407

Analog Power AM3402N N-Channel Logic Level MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize a high cell density trench process to VDS (V) rDS(on) (Ω) ID (A) provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical 0.027 @ VGS = 10 V 6.3 applications are DC-DC converters and power 30 0.035 @ VGS = 4.5V 5.5 management in portable an

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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