AM3412N Todos los transistores

 

AM3412N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM3412N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.3 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 6.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1 V

Carga de compuerta (Qg): 3.4 nC

Tiempo de elevación (tr): 5 nS

Conductancia de drenaje-sustrato (Cd): 54 pF

Resistencia drenaje-fuente RDS(on): 0.027 Ohm

Empaquetado / Estuche: TSOP-6

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AM3412N Datasheet (PDF)

1.1. am3412n.pdf Size:327K _analog_power

AM3412N
AM3412N

Analog Power AM3412N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID(A) • Low r trench technology DS(on) 27 @ VGS = 10V 6.3 • Low thermal impedance 30 35 @ VGS = 4.5V 5.5 • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R

5.1. am3411pe.pdf Size:73K _analog_power

AM3412N
AM3412N

Analog Power AM3411PE P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize a high cell density trench process to provide low rDS(on) and to ensure minimal VDS (V) rDS(on) (Ω) ID (A) power loss and heat dissipation. Typical 0.042 @ VGS = -4.5V -5.7 applications are DC-DC converters and -20 0.057 @ VGS = -2.5V -4.9 power management in portab

5.2. am3413p.pdf Size:315K _analog_power

AM3412N
AM3412N

Analog Power AM3413P P-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID (A) • Low r trench technology DS(on) 2400 @ VGS = -10V -0.74 • Low thermal impedance -200 2550 @ VGS = -4.5V -0.72 • Fast switching speed TSOP-6 Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits

 5.3. am3415.pdf Size:483K _ait_semi

AM3412N
AM3412N

AiT Semiconductor Inc. AM3415 www.ait-ic.com SOT-23 MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM3415 is the P-Channel logic enhancement  -20V/-4.0A, R =45mΩ(typ.)@V =-4.5V DS(ON) GS mode power field effect transistor is produced using  -20V/-4.0A, R =54mΩ(typ.)@V =-2.5V DS(ON) GS high cell density. Advanced trench technology to provide ex

5.4. am3413.pdf Size:585K _ait_semi

AM3412N
AM3412N

AiT Semiconductor Inc. AM3413 www.ait-ic.com MOSFET 20V P-CHANNEL MOSFET DESCRIPTION FEATURES The AM3413 uses advanced trench technology to  V = -20V DS provide excellent R , low gate charge and  I = -3A (V = -4.5V) DS(ON) D GS operation with gate voltages as low as 1.8V. This  R < 80mΩ (V =- 4.5V) DS(ON) GS device is suitable for use as a load switch or in PWM  R

 5.5. am3416.pdf Size:612K _ait_semi

AM3412N
AM3412N

AM3416 AiT Semiconductor Inc. MOSFET www.ait-ic.com N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM3416 is available in a SOT-23 package.  20V/6A , R =26mΩ(Max.) @V =4.5V DS(ON) GS R =37mΩ(Max.) @V =2.5V DS(ON) GS  ESD Protected  Super High Dense Cell Design  Reliable and Rugged  Lead Free and Green Devices Available (RoHS Compliant) 

5.6. am3415a.pdf Size:814K _ait_semi

AM3412N
AM3412N

AM3415A AiT Semiconductor Inc. www.ait-ic.com MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM3415A uses advanced trench technology to  V = -20V,I =-4A DS D provide excellent R , low gate charge and R < 60mΩ @ V =-2.5V DS(ON) DS(ON) GS operation with gate voltages as low as1.8V. This R < 47mΩ @ V =-4.5V DS(ON) GS device is suitable for use as a

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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