All MOSFET. AM3412N Datasheet

 

AM3412N MOSFET. Datasheet pdf. Equivalent


   Type Designator: AM3412N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 6.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.4 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TSOP-6

 AM3412N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AM3412N Datasheet (PDF)

 ..1. Size:327K  analog power
am3412n.pdf

AM3412N
AM3412N

Analog Power AM3412NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)27 @ VGS = 10V6.3 Low thermal impedance 3035 @ VGS = 4.5V5.5 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R

 9.1. Size:315K  analog power
am3413p.pdf

AM3412N
AM3412N

Analog Power AM3413PP-Channel 200-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)2400 @ VGS = -10V -0.74 Low thermal impedance -2002550 @ VGS = -4.5V -0.72 Fast switching speed TSOP-6 Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits

 9.2. Size:73K  analog power
am3411pe.pdf

AM3412N
AM3412N

Analog Power AM3411PEP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize a high cell density trench process to provide low rDS(on) and to ensure minimal VDS (V) rDS(on) () ID (A)power loss and heat dissipation. Typical 0.042 @ VGS = -4.5V -5.7applications are DC-DC converters and -200.057 @ VGS = -2.5V -4.9power management in portab

 9.3. Size:585K  ait semi
am3413.pdf

AM3412N
AM3412N

AiT Semiconductor Inc. AM3413 www.ait-ic.com MOSFET 20V P-CHANNEL MOSFET DESCRIPTION FEATURES The AM3413 uses advanced trench technology to V = -20V DS provide excellent R , low gate charge and I = -3A (V = -4.5V) DS(ON) D GSoperation with gate voltages as low as 1.8V. This R

 9.4. Size:814K  ait semi
am3415a.pdf

AM3412N
AM3412N

AM3415A AiT Semiconductor Inc. www.ait-ic.com MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM3415A uses advanced trench technology to V = -20V,I =-4A DS Dprovide excellent R , low gate charge and R

 9.5. Size:483K  ait semi
am3415.pdf

AM3412N
AM3412N

AiT Semiconductor Inc. AM3415 www.ait-ic.com SOT-23 MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM3415 is the P-Channel logic enhancement -20V/-4.0A, R =45m(typ.)@V =-4.5V DS(ON) GSmode power field effect transistor is produced using -20V/-4.0A, R =54m(typ.)@V =-2.5V DS(ON) GShigh cell density. Advanced trench technology to provide ex

 9.6. Size:612K  ait semi
am3416.pdf

AM3412N
AM3412N

AM3416 AiT Semiconductor Inc. MOSFET www.ait-ic.com N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM3416 is available in a SOT-23 package. 20V/6A , R =26m(Max.) @V =4.5V DS(ON) GSR =37m(Max.) @V =2.5V DS(ON) GS ESD Protected Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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