AM3412N Datasheet. Specs and Replacement

Type Designator: AM3412N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: TSOP-6

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AM3412N datasheet

 ..1. Size:327K  analog power
 am3412n.pdf pdf_icon

AM3412N

Analog Power AM3412N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 27 @ VGS = 10V 6.3 Low thermal impedance 30 35 @ VGS = 4.5V 5.5 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R... See More ⇒

 9.1. Size:315K  analog power
 am3413p.pdf pdf_icon

AM3412N

Analog Power AM3413P P-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 2400 @ VGS = -10V -0.74 Low thermal impedance -200 2550 @ VGS = -4.5V -0.72 Fast switching speed TSOP-6 Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits... See More ⇒

 9.2. Size:73K  analog power
 am3411pe.pdf pdf_icon

AM3412N

Analog Power AM3411PE P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize a high cell density trench process to provide low rDS(on) and to ensure minimal VDS (V) rDS(on) ( ) ID (A) power loss and heat dissipation. Typical 0.042 @ VGS = -4.5V -5.7 applications are DC-DC converters and -20 0.057 @ VGS = -2.5V -4.9 power management in portab... See More ⇒

 9.3. Size:585K  ait semi
 am3413.pdf pdf_icon

AM3412N

AiT Semiconductor Inc. AM3413 www.ait-ic.com MOSFET 20V P-CHANNEL MOSFET DESCRIPTION FEATURES The AM3413 uses advanced trench technology to V = -20V DS provide excellent R , low gate charge and I = -3A (V = -4.5V) DS(ON) D GS operation with gate voltages as low as 1.8V. This R ... See More ⇒

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Detailed specifications: AM3402N, AM3403P, AM3405P, AM3406, AM3406N, AM3407, AM3407PE, AM3411PE, IRFB31N20D, AM3413, AM3413P, AM3415, AM3415A, AM3416, AM3422, AM3423P, AM3425P

Keywords - AM3412N MOSFET specs

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