AM3431P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM3431P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 163 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm

Encapsulados: TSOP-6

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AM3431P datasheet

 ..1. Size:315K  analog power
am3431p.pdf pdf_icon

AM3431P

Analog Power AM3431P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 24 @ VGS = -10V -7.5 Low thermal impedance -30 36 @ VGS = -4.5V -6.1 Fast switching speed Typical Applications TSOP-6 Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS

 9.1. Size:161K  analog power
am3435p.pdf pdf_icon

AM3431P

Analog Power AM3435P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making VDS (V) rDS(on) m( )ID (A) this device ideal for use in power management 56 @ VGS = -4.5V -4.9 circuitry. Typical applications are PWMDC-DC -26.5 converters, power managemen

 9.2. Size:247K  analog power
am3438ne.pdf pdf_icon

AM3431P

Analog Power AM3438NE N-Channel Logic Level MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize a high cell density trench process to VDS (V) rDS(on) ( ) ID (A) provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical 0.027 @ VGS = 10 V 6.3 applications are DC-DC converters and power 30 0.04 @ VGS = 4.5V 5.5 management in portable an

 9.3. Size:59K  analog power
am3434n.pdf pdf_icon

AM3431P

Analog Power AM3434N N-Channel 20V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.032 @ V = 4.5 V 6.0 GS battery-powered products

Otros transistores... AM3413P, AM3415, AM3415A, AM3416, AM3422, AM3423P, AM3425P, AM3428N, 60N06, AM3434N, AM3435P, AM3438NE, AM3441P, AM3443C, AM3443P, AM3444N, AM3445P