AM3431P Specs and Replacement

Type Designator: AM3431P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 163 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: TSOP-6

AM3431P substitution

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AM3431P datasheet

 ..1. Size:315K  analog power
am3431p.pdf pdf_icon

AM3431P

Analog Power AM3431P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 24 @ VGS = -10V -7.5 Low thermal impedance -30 36 @ VGS = -4.5V -6.1 Fast switching speed Typical Applications TSOP-6 Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS ... See More ⇒

 9.1. Size:161K  analog power
am3435p.pdf pdf_icon

AM3431P

Analog Power AM3435P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making VDS (V) rDS(on) m( )ID (A) this device ideal for use in power management 56 @ VGS = -4.5V -4.9 circuitry. Typical applications are PWMDC-DC -26.5 converters, power managemen... See More ⇒

 9.2. Size:247K  analog power
am3438ne.pdf pdf_icon

AM3431P

Analog Power AM3438NE N-Channel Logic Level MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize a high cell density trench process to VDS (V) rDS(on) ( ) ID (A) provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical 0.027 @ VGS = 10 V 6.3 applications are DC-DC converters and power 30 0.04 @ VGS = 4.5V 5.5 management in portable an... See More ⇒

 9.3. Size:59K  analog power
am3434n.pdf pdf_icon

AM3431P

Analog Power AM3434N N-Channel 20V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.032 @ V = 4.5 V 6.0 GS battery-powered products ... See More ⇒

Detailed specifications: AM3413P, AM3415, AM3415A, AM3416, AM3422, AM3423P, AM3425P, AM3428N, 60N06, AM3434N, AM3435P, AM3438NE, AM3441P, AM3443C, AM3443P, AM3444N, AM3445P

Keywords - AM3431P MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.