AM3454N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM3454N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.058 Ohm

Encapsulados: TSOP-6

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AM3454N datasheet

 ..1. Size:214K  analog power
am3454n.pdf pdf_icon

AM3454N

Analog Power AM3454N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 58 @ VGS = 10V 4.8 converters and power management in portable and 30 battery-powered products su

 9.1. Size:203K  analog power
am3456ne.pdf pdf_icon

AM3454N

Analog Power AM3456NE N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARY provide low rDS(on) and to ensure minimal VDS (V) rDS(on) ( )ID (A) power loss and heat dissipation. Typical 0.032 @ VGS = 10 V 5.3 applications are DC-DC converters and 30 power management in portable and 0.044 @ VGS = 4.5V 4.5

 9.2. Size:324K  analog power
am3458n.pdf pdf_icon

AM3454N

Analog Power AM3458N N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 92 @ VGS = 10V 3.4 Low thermal impedance 60 107 @ VGS = 4.5V 3.1 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.3. Size:140K  analog power
am3457pe.pdf pdf_icon

AM3454N

Analog Power AM3457PE P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize a high cell density trench process to provide low rDS(on) and to ensure minimal VDS (V) rDS(on) ( ) ID (A) power loss and heat dissipation. Typical 0.056 @ VG = -10V -4.0 S applications are DC-DC converters and -30.0 0.083 @ VG = -4.5V -3.4 power management in port

Otros transistores... AM3438NE, AM3441P, AM3443C, AM3443P, AM3444N, AM3445P, AM3446N, AM3447P, 50N06, AM3455P, AM3456N, AM3456NE, AM3457P, AM3457PE, AM3458N, AM3459P, AM3460N