Справочник MOSFET. AM3454N

 

AM3454N Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AM3454N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.058 Ohm
   Тип корпуса: TSOP-6
     - подбор MOSFET транзистора по параметрам

 

AM3454N Datasheet (PDF)

 ..1. Size:214K  analog power
am3454n.pdfpdf_icon

AM3454N

Analog Power AM3454NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 58 @ VGS = 10V 4.8converters and power management in portable and 30battery-powered products su

 9.1. Size:203K  analog power
am3456ne.pdfpdf_icon

AM3454N

Analog Power AM3456NEN-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETsutilize a high cell density trench process to PRODUCT SUMMARYprovide low rDS(on) and to ensure minimal VDS (V) rDS(on) ()ID (A)power loss and heat dissipation. Typical 0.032 @ VGS = 10 V 5.3applications are DC-DC converters and 30power management in portable and 0.044 @ VGS = 4.5V 4.5

 9.2. Size:324K  analog power
am3458n.pdfpdf_icon

AM3454N

Analog Power AM3458NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)92 @ VGS = 10V3.4 Low thermal impedance 60107 @ VGS = 4.5V3.1 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.3. Size:140K  analog power
am3457pe.pdfpdf_icon

AM3454N

Analog Power AM3457PEP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize a high cell density trench process to provide low rDS(on) and to ensure minimal VDS (V) rDS(on) () ID (A)power loss and heat dissipation. Typical 0.056 @ VG = -10V -4.0Sapplications are DC-DC converters and -30.00.083 @ VG = -4.5V -3.4power management in port

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TSP840MR | SM2A18DSK | 2SK610 | 2SK2525-01 | 2SK3479-Z | AP55T10GH-HF | SM2370NSA

 

 
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