AM3456N Todos los transistores

 ..1. Size:129K  analog power
 am3456n.pdf

Analog Power AM3456N N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves VDS (V) rDS(on) ( )ID (A) energy, making this device ideal for use in 0.044 @ VGS = 10 V 5.1 power management circuitry. Typical 30 0.064 @ VGS = 4.5V 4.5 applications are power switch, power

 0.1. Size:203K  analog power
 am3456ne.pdf

Analog Power AM3456NE N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARY provide low rDS(on) and to ensure minimal VDS (V) rDS(on) ( )ID (A) power loss and heat dissipation. Typical 0.032 @ VGS = 10 V 5.3 applications are DC-DC converters and 30 power management in portable and 0.044 @ VGS = 4.5V 4.5

 9.1. Size:324K  analog power
 am3458n.pdf

Analog Power AM3458N N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 92 @ VGS = 10V 3.4 Low thermal impedance 60 107 @ VGS = 4.5V 3.1 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.2. Size:140K  analog power
 am3457pe.pdf

Analog Power AM3457PE P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize a high cell density trench process to provide low rDS(on) and to ensure minimal VDS (V) rDS(on) ( ) ID (A) power loss and heat dissipation. Typical 0.056 @ VG = -10V -4.0 S applications are DC-DC converters and -30.0 0.083 @ VG = -4.5V -3.4 power management in port

 9.3. Size:214K  analog power
 am3454n.pdf

Analog Power AM3454N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 58 @ VGS = 10V 4.8 converters and power management in portable and 30 battery-powered products su

 9.4. Size:129K  analog power
 am3459p.pdf

Analog Power AM3459P P-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARY minimal power loss and conserves energy, making VDS (V) rDS(on) ( )ID (A) this device ideal for use in power management 0.310 @ VGS = -10V 2.1 circuitry. Typical applications are PWMDC-DC -60 converters, power management in

 9.5. Size:128K  analog power
 am3455p.pdf

Analog Power AM3455P P-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) PRODUCT SUMMARY assures minimal power loss and conserves VDS (V) rDS(on) ( )ID (A) energy, making this device ideal for use in 0.112 @ VGS = 10 V 3.4 power management circuitry. Typical -30 applications are power switch, power 0.172 @ VGS = 4.5V

 9.6. Size:319K  analog power
 am3457p.pdf

Analog Power AM3457P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 54 @ VGS = -10V -5 Low thermal impedance -30 75 @ VGS = -4.5V -4.2 Fast switching speed Typical Applications TSOP-6 Battery Powered Instruments Portable Computing Mobile Phones GPS Units and Media Playe