Справочник MOSFET. AM3456N

 

AM3456N Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AM3456N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 10 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.044 Ohm
   Тип корпуса: TSOP-6
     - подбор MOSFET транзистора по параметрам

 

AM3456N Datasheet (PDF)

 ..1. Size:129K  analog power
am3456n.pdfpdf_icon

AM3456N

Analog Power AM3456NN-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETsPRODUCT SUMMARYutilize High Cell Density process. Low rDS(on)assures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.044 @ VGS = 10 V 5.1power management circuitry. Typical 300.064 @ VGS = 4.5V 4.5applications are power switch, power

 0.1. Size:203K  analog power
am3456ne.pdfpdf_icon

AM3456N

Analog Power AM3456NEN-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETsutilize a high cell density trench process to PRODUCT SUMMARYprovide low rDS(on) and to ensure minimal VDS (V) rDS(on) ()ID (A)power loss and heat dissipation. Typical 0.032 @ VGS = 10 V 5.3applications are DC-DC converters and 30power management in portable and 0.044 @ VGS = 4.5V 4.5

 9.1. Size:324K  analog power
am3458n.pdfpdf_icon

AM3456N

Analog Power AM3458NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)92 @ VGS = 10V3.4 Low thermal impedance 60107 @ VGS = 4.5V3.1 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.2. Size:140K  analog power
am3457pe.pdfpdf_icon

AM3456N

Analog Power AM3457PEP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize a high cell density trench process to provide low rDS(on) and to ensure minimal VDS (V) rDS(on) () ID (A)power loss and heat dissipation. Typical 0.056 @ VG = -10V -4.0Sapplications are DC-DC converters and -30.00.083 @ VG = -4.5V -3.4power management in port

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: HAT2210R | P0804BD

 

 
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