ITF86174SQT Todos los transistores

 

ITF86174SQT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ITF86174SQT
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 39 nC
   trⓘ - Tiempo de subida: 52 nS
   Cossⓘ - Capacitancia de salida: 475 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: TSSOP8
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ITF86174SQT Datasheet (PDF)

 ..1. Size:207K  intersil
itf86174sqt.pdf pdf_icon

ITF86174SQT

ITF86174SQTData Sheet March 2000 File Number 4799.39A, 30V, 0.016 Ohm, P-Channel, Logic FeaturesLevel, Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.016, VGS = -10VPackaging- rDS(ON) = 0.024, VGS = -4.5VTSSOP-8- rDS(ON) = 0.027, VGS = -4V Gate to Source Protection Diode5 Simulation Models1- Temperature Compensated PSPICE and SABER243E

 7.1. Size:173K  intersil
itf86172sk8t.pdf pdf_icon

ITF86174SQT

ITF86172SK8TData Sheet January 2000 File Number 4809.110A, 30V, 0.016 Ohm, P-Channel, Logic FeaturesLevel, Power MOSFET Ultra Low On-Resistance[ /Title- rDS(ON) = 0.016, VGS = -10VPackaging(HUF7- rDS(ON) = 0.023, VGS = -4.5VSO8 (JEDEC MS-012AA)6400S - rDS(ON) = 0.026, VGS = -4VBRANDING DASH Gate to Source Protection DiodeK8) Simulation Models/Su

 8.1. Size:198K  intersil
itf86116sqt.pdf pdf_icon

ITF86174SQT

ITF86116SQTData Sheet March 2000 File Number 4808.210A, 30V, 0.012 Ohm, N-Channel, Logic FeaturesLevel, Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.012, VGS = 10VPackaging- rDS(ON) = 0.016, VGS = 4.5VTSSOP8 Gate to Source Protection Diode Simulation Models- Temperature Compensated PSPICE and SABER5 Electrical Models1 - Spice and SABER Thermal Im

 8.2. Size:172K  intersil
itf86182sk8t.pdf pdf_icon

ITF86174SQT

ITF86182SK8TData Sheet January 2000 File Number 4797.211A, 30V, 0.0115 Ohm, P-Channel, Logic FeaturesLevel, Power MOSFET Ultra Low On-Resistance[ /Title- rDS(ON) = 0.0115, VGS = -10VPackaging(ITF86- rDS(ON) = 0.016, VGS = -4.5VSO8 (JEDEC MS-012AA)182SK - rDS(ON) = 0.0175, VGS = -4V8T) BRANDING DASH Gate to Source Protection Diode/Sub- Simulation M

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History: IRF513

 

 
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