All MOSFET. ITF86174SQT Datasheet

 

ITF86174SQT MOSFET. Datasheet pdf. Equivalent


   Type Designator: ITF86174SQT
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 39 nC
   trⓘ - Rise Time: 52 nS
   Cossⓘ - Output Capacitance: 475 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TSSOP8

 ITF86174SQT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ITF86174SQT Datasheet (PDF)

 ..1. Size:207K  intersil
 itf86174sqt.pdf

ITF86174SQT ITF86174SQT

ITF86174SQTData Sheet March 2000 File Number 4799.39A, 30V, 0.016 Ohm, P-Channel, Logic FeaturesLevel, Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.016, VGS = -10VPackaging- rDS(ON) = 0.024, VGS = -4.5VTSSOP-8- rDS(ON) = 0.027, VGS = -4V Gate to Source Protection Diode5 Simulation Models1- Temperature Compensated PSPICE and SABER243E

 7.1. Size:173K  intersil
 itf86172sk8t.pdf

ITF86174SQT ITF86174SQT

ITF86172SK8TData Sheet January 2000 File Number 4809.110A, 30V, 0.016 Ohm, P-Channel, Logic FeaturesLevel, Power MOSFET Ultra Low On-Resistance[ /Title- rDS(ON) = 0.016, VGS = -10VPackaging(HUF7- rDS(ON) = 0.023, VGS = -4.5VSO8 (JEDEC MS-012AA)6400S - rDS(ON) = 0.026, VGS = -4VBRANDING DASH Gate to Source Protection DiodeK8) Simulation Models/Su

 8.1. Size:198K  intersil
 itf86116sqt.pdf

ITF86174SQT ITF86174SQT

ITF86116SQTData Sheet March 2000 File Number 4808.210A, 30V, 0.012 Ohm, N-Channel, Logic FeaturesLevel, Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.012, VGS = 10VPackaging- rDS(ON) = 0.016, VGS = 4.5VTSSOP8 Gate to Source Protection Diode Simulation Models- Temperature Compensated PSPICE and SABER5 Electrical Models1 - Spice and SABER Thermal Im

 8.2. Size:172K  intersil
 itf86182sk8t.pdf

ITF86174SQT ITF86174SQT

ITF86182SK8TData Sheet January 2000 File Number 4797.211A, 30V, 0.0115 Ohm, P-Channel, Logic FeaturesLevel, Power MOSFET Ultra Low On-Resistance[ /Title- rDS(ON) = 0.0115, VGS = -10VPackaging(ITF86- rDS(ON) = 0.016, VGS = -4.5VSO8 (JEDEC MS-012AA)182SK - rDS(ON) = 0.0175, VGS = -4V8T) BRANDING DASH Gate to Source Protection Diode/Sub- Simulation M

 8.3. Size:173K  intersil
 itf86130sk8t.pdf

ITF86174SQT ITF86174SQT

ITF86130SK8TTMData Sheet June 2000 File Number 4798.414A, 30V, 0.0078 Ohm, N-Channel, Logic FeaturesLevel, Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.0078, VGS = 10VPackaging- rDS(ON) = 0.010, VGS = 4.5VSO8 (JEDEC MS-012AA)- rDS(ON) = 0.012, VGS = 4.0VBRANDING DASH Gate to Source Protection Diode Simulation Models- Temperature Compensated PSP

 8.4. Size:199K  intersil
 itf86110dk8t.pdf

ITF86174SQT ITF86174SQT

ITF86110DK8TData Sheet January 2000 File Number 4807.27.5A, 30V, 0.025 Ohm, Dual N-Channel, FeaturesLogic Level, Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.025, VGS = 10VPackaging[ /Title- rDS(ON) = 0.034, VGS = 4.5VSO8 (JEDEC MS-012AA)(HUF7- rDS(ON) = 0.042, VGS = 4.0V6400S Gate to Source Protection DiodeBRANDING DASHK8) Simulation Model

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History: SML10026DFN | IXTQ26P20P

 

 
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