ITF87012SVT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ITF87012SVT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 2 W
Tensión drenaje-fuente (Vds): 20 V
Corriente continua de drenaje (Id): 6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Resistencia drenaje-fuente RDS(on): 0.035 Ohm
Empaquetado / Estuche: TSOP6
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ITF87012SVT Datasheet (PDF)
1.1. itf87012svt.pdf 
Size:179K _intersil
ITF87012SVT Data Sheet March 2000 File Number 4810.2 6A, 20V, 0.035 Ohm, N-Channel, Features 2.5V Specified Power MOSFET • Ultra Low On-Resistance - rDS(ON) = 0.035Ω, VGS = 4.5V Packaging - rDS(ON) = 0.038Ω, VGS = 4.0V TSOP-6 - rDS(ON) = 0.045Ω, VGS = 2.5V • 2.5 V Gate Drive Capability • Small Profile Package 4 1 • Gate to Source Protection Diode 2 3 • Simulatio
4.1. itf87008dqt.pdf Size:201K _intersil
ITF87008DQT Data Sheet March 2000 File Number 4814.2 7.0A, 20V, 0.023 Ohm, Dual N-Channel, Features 2.5V Specified Power MOSFET • Ultra Low On-Resistance - rDS(ON) = 0.023Ω, VGS = 4.5V Packaging - rDS(ON) = 0.024Ω, VGS = 4.0V TSSOP-8 - rDS(ON) = 0.029Ω, VGS = 2.5V • 2.5 Volt Gate Drive Capability 5 • Gate to Source Protection Diode 1 • Simulation Models 2 4 3 - T
4.2. itf87052svt.pdf Size:186K _intersil
ITF87052SVT Data Sheet March 2000 File Number 4800.3 3A, 20V, 0.115 Ohm, P-Channel, Features 2.5V Specified Power MOSFET • Ultra Low On-Resistance - rDS(ON) = 0.115Ω, VGS = -4.5V Packaging - rDS(ON) = 0.120Ω, VGS = -4.0V TSOP-6 - rDS(ON) = 0.190Ω, VGS = -2.5V • 2.5 V Gate Drive Capability • Small Profile Package 4 1 • Gate to Source Protection Diode 2 3 • Simula
4.3. itf87056dqt.pdf Size:236K _intersil
ITF87056DQT Data Sheet March 2000 File Number 4813.2 5A, 20V, 0.045 Ohm, Dual P-Channel, Features 2.5V Specified Power MOSFET • Ultra Low On-Resistance - rDS(ON) = 0.045Ω, VGS = -4.5V Packaging - rDS(ON) = 0.048Ω, VGS = -4.0V TSSOP-8 - rDS(ON) = 0.077Ω, VGS = -2.5V • 2.5V Gate Drive Capability 5 • Gate to Source Protection Diode 1 • Simulation Models 2 4 3 - Temp
4.4. itf87068sqt.pdf Size:196K _intersil
ITF87068SQT Data Sheet March 2000 File Number 4811.2 9A, 20V, 0.015 Ohm, P-Channel, Features 2.5V Specified Power MOSFET • Ultra Low On-Resistance - rDS(ON) = 0.015Ω, VGS = -4.5V Packaging - rDS(ON) = 0.016Ω, VGS = -4.0V TSSOP-8 - rDS(ON) = 0.023Ω, VGS = -2.5V 5 • 2.5V Gate Drive Capability 1 • Gate to Source Protection Diode 2 4 3 • Simulation Models - Temperatur
4.5. itf87072dk8t.pdf Size:173K _intersil
ITF87072DK8T TM Data Sheet March 2000 File Number 4812.3 6A, 20V, 0.037 Ohm, Dual P-Channel, Features 2.5V Specified Power MOSFET • Ultra Low On-Resistance - rDS(ON) = 0.037Ω, VGS = -4.5V Packaging - rDS(ON) = 0.039Ω, VGS = -4.0V SO8 (JEDEC MS-012AA) - rDS(ON) = 0.059Ω, VGS = -2.5V • Gate to Source Protection Diode BRANDING DASH • Simulation Models - Temperature Compen
Otros transistores... IRLZ44NS , ITF86110DK8T , ITF86116SQT , ITF86130SK8T , ITF86172SK8T , ITF86174SQT , ITF86182SK8T , ITF87008DQT , IRFP260 , ITF87052SVT , ITF87056DQT , ITF87068SQT , ITF87072DK8T , IXBH15N140 , IXBH15N160 , IXBH15N170 , IXBH20N140 .
