Справочник MOSFET. ITF87012SVT

 

ITF87012SVT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ITF87012SVT
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 142 ns
   Cossⓘ - Выходная емкость: 227 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm
   Тип корпуса: TSOP6 SC95

 Аналог (замена) для ITF87012SVT

 

 

ITF87012SVT Datasheet (PDF)

 ..1. Size:179K  intersil
 itf87012svt.pdf

ITF87012SVT ITF87012SVT

ITF87012SVTData Sheet March 2000 File Number 4810.26A, 20V, 0.035 Ohm, N-Channel, Features2.5V Specified Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.035, VGS = 4.5VPackaging- rDS(ON) = 0.038, VGS = 4.0VTSOP-6- rDS(ON) = 0.045, VGS = 2.5V 2.5 V Gate Drive Capability Small Profile Package41 Gate to Source Protection Diode23 Simulatio

 8.1. Size:201K  intersil
 itf87008dqt.pdf

ITF87012SVT ITF87012SVT

ITF87008DQTData Sheet March 2000 File Number 4814.27.0A, 20V, 0.023 Ohm, Dual N-Channel, Features2.5V Specified Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.023, VGS = 4.5VPackaging- rDS(ON) = 0.024, VGS = 4.0VTSSOP-8- rDS(ON) = 0.029, VGS = 2.5V 2.5 Volt Gate Drive Capability5 Gate to Source Protection Diode1 Simulation Models243- T

 8.2. Size:236K  intersil
 itf87056dqt.pdf

ITF87012SVT ITF87012SVT

ITF87056DQTData Sheet March 2000 File Number 4813.25A, 20V, 0.045 Ohm, Dual P-Channel, Features2.5V Specified Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.045, VGS = -4.5VPackaging- rDS(ON) = 0.048, VGS = -4.0VTSSOP-8- rDS(ON) = 0.077, VGS = -2.5V 2.5V Gate Drive Capability5 Gate to Source Protection Diode1 Simulation Models243- Temp

 8.3. Size:186K  intersil
 itf87052svt.pdf

ITF87012SVT ITF87012SVT

ITF87052SVTData Sheet March 2000 File Number 4800.33A, 20V, 0.115 Ohm, P-Channel, Features2.5V Specified Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.115, VGS = -4.5VPackaging- rDS(ON) = 0.120, VGS = -4.0VTSOP-6- rDS(ON) = 0.190, VGS = -2.5V 2.5 V Gate Drive Capability Small Profile Package41 Gate to Source Protection Diode23 Simula

 8.4. Size:196K  intersil
 itf87068sqt.pdf

ITF87012SVT ITF87012SVT

ITF87068SQTData Sheet March 2000 File Number 4811.29A, 20V, 0.015 Ohm, P-Channel, Features2.5V Specified Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.015, VGS = -4.5VPackaging- rDS(ON) = 0.016, VGS = -4.0VTSSOP-8- rDS(ON) = 0.023, VGS = -2.5V5 2.5V Gate Drive Capability1 Gate to Source Protection Diode243 Simulation Models- Temperatur

 8.5. Size:173K  intersil
 itf87072dk8t.pdf

ITF87012SVT ITF87012SVT

ITF87072DK8TTMData Sheet March 2000 File Number 4812.36A, 20V, 0.037 Ohm, Dual P-Channel, Features2.5V Specified Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.037, VGS = -4.5VPackaging- rDS(ON) = 0.039, VGS = -4.0VSO8 (JEDEC MS-012AA)- rDS(ON) = 0.059, VGS = -2.5V Gate to Source Protection DiodeBRANDING DASH Simulation Models- Temperature Compen

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