AM3962NE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM3962NE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.15 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.153 Ohm
Encapsulados: TSOP-6
Búsqueda de reemplazo de AM3962NE MOSFET
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AM3962NE datasheet
am3962ne.pdf
Analog Power AM3962NE N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize a high cell density trench process to VDS (V) rDS(on) ( )ID (A) provide low rDS(on) and to ensure minimal 0.153 @ VGS = 10V 2.3 power loss and heat dissipation. Typical 60 applications are DC-DC converters and 0.185 @ VGS = 4.5V 2.1 power management in portable and D
am3962n.pdf
Analog Power AM3962N N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize High Cell Density process. Low VDS (V) rDS(on) ( )ID (A) rDS(on) assures minimal power loss and 0.153 @ VGS = 10V 2.3 conserves energy, making this device ideal 60 for use in power management circuitry. 0.185 @ VGS = 4.5V 2.1 Typical applications are DC-DC converters,
am3961p.pdf
Analog Power AM3961P P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 310 @ VGS = -10V -1.6 Low thermal impedance -60 465 @ VGS = -4.5V -1.3 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI
Otros transistores... AM3932N, AM3932NE, AM3933P, AM3940N, AM3940NE, AM3949P, AM3961P, AM3962N, IRF530, AM3993P, AM3998N, AM40N04-20D, AM40N04-30D, AM40N04-30DE, AM40N06-28D, AM40N08-30D, AM40N10-28D
History: SM7511NSUB | SRC70R230
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