AM3962NE Datasheet and Replacement
Type Designator: AM3962NE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.153 Ohm
Package: TSOP-6
AM3962NE substitution
AM3962NE Datasheet (PDF)
am3962ne.pdf

Analog Power AM3962NEN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETsPRODUCT SUMMARYutilize a high cell density trench process to VDS (V) rDS(on) ()ID (A)provide low rDS(on) and to ensure minimal 0.153 @ VGS = 10V 2.3power loss and heat dissipation. Typical 60applications are DC-DC converters and 0.185 @ VGS = 4.5V 2.1power management in portable and D
am3962n.pdf

Analog Power AM3962NN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETsPRODUCT SUMMARYutilize High Cell Density process. Low VDS (V) rDS(on) ()ID (A)rDS(on) assures minimal power loss and 0.153 @ VGS = 10V 2.3conserves energy, making this device ideal 60for use in power management circuitry. 0.185 @ VGS = 4.5V 2.1Typical applications are DC-DC converters,
am3961p.pdf

Analog Power AM3961PP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)310 @ VGS = -10V -1.6 Low thermal impedance -60465 @ VGS = -4.5V -1.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI
Datasheet: AM3932N , AM3932NE , AM3933P , AM3940N , AM3940NE , AM3949P , AM3961P , AM3962N , AO4407 , AM3993P , AM3998N , AM40N04-20D , AM40N04-30D , AM40N04-30DE , AM40N06-28D , AM40N08-30D , AM40N10-28D .
History: RFP5P12 | IRF820ASPBF | IRFY430CM
Keywords - AM3962NE MOSFET datasheet
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History: RFP5P12 | IRF820ASPBF | IRFY430CM



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