AM3962NE
MOSFET. Datasheet pdf. Equivalent
Type Designator: AM3962NE
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.15
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 2.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 3
nC
trⓘ - Rise Time: 12
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.153
Ohm
Package:
TSOP-6
AM3962NE
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM3962NE
Datasheet (PDF)
..1. Size:202K analog power
am3962ne.pdf
Analog Power AM3962NEN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETsPRODUCT SUMMARYutilize a high cell density trench process to VDS (V) rDS(on) ()ID (A)provide low rDS(on) and to ensure minimal 0.153 @ VGS = 10V 2.3power loss and heat dissipation. Typical 60applications are DC-DC converters and 0.185 @ VGS = 4.5V 2.1power management in portable and D
7.1. Size:180K analog power
am3962n.pdf
Analog Power AM3962NN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETsPRODUCT SUMMARYutilize High Cell Density process. Low VDS (V) rDS(on) ()ID (A)rDS(on) assures minimal power loss and 0.153 @ VGS = 10V 2.3conserves energy, making this device ideal 60for use in power management circuitry. 0.185 @ VGS = 4.5V 2.1Typical applications are DC-DC converters,
9.1. Size:323K analog power
am3961p.pdf
Analog Power AM3961PP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)310 @ VGS = -10V -1.6 Low thermal impedance -60465 @ VGS = -4.5V -1.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI
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